Datasheet > ELM16601EA-S

ELM16601EA-S

更新时间： 2025-04-16 11:46:03

品牌	Logo	应用领域
ELM-TECH		/
页数	文件大小	规格书
7页	587K
描述
Complementary MOSFET

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中文翻译

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数据手册

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ELM16601EA-S 数据手册

Complementary MOSFET

ELM16601EA-S

■General Description

■Features

ELM16601EA-S uses advanced trench

technology to provide excellent Rds(on)

and low gate charge.

N-channel

P-channel

• Vds=30V

Vds=-30V

• Id=3.4A(Vgs=10V)

Id=-2.3A(Vgs=-10V)

• Rds(on) < 60mΩ(Vgs=10V) Rds(on) < 135mΩ(Vgs=-10V)

• Rds(on) < 75mΩ(Vgs=4.5V) Rds(on) < 185mΩ(Vgs=-4.5V)

• Rds(on) < 115mΩ(Vgs=2.5V) Rds(on) < 265mΩ(Vgs=-2.5V)

■Maximum Absolute Ratings

Parameter

Symbol

Vds

N-ch (Max.)

P-ch (Max.)

-30

Unit Note

Drain source voltage

Gate source voltage

Vgs

±12

Ta=25°C

Ta=70°C

3.4

2.7

-2.3

-1.8

Continuous drain current

Pulsed drain current

Idm

-30

Ta=25°C

Ta=70°C

1.15

Power dissipation

°C

0.73

Junction and storage temperature range

Tj,Tstg

55 to 150

■Thermal Characteristics

Parameter

Symbol Device

Typ.

Max.

110

150

Unit

Note

Maximum junction to ambient

- -

t≤10s

°C/W

Rθja

Maximum junction to ambient

- -

Steady-state

t≤10s

N-ch

106

Maximum junction to lead

- -

Rθjl

Maximum junction to ambient

- -

110

150

Rθja

P-ch

Maximum junction to ambient

- -

Steady-state

106

Maximum junction to lead

- -

Rθjl

■Pin configuration

■Circuit

SOT-26(TOP VIEW)

• N-ch

• P-ch

Pin No.

Pin name

GATE1

SOURCE2

GATE2

DRAIN2

SOURCE1

DRAIN1

7 - 1

12 3 4 5 6 7

中文翻译

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