Datasheet > ELM16404EA-S

ELM16404EA-S

更新时间： 2025-04-16 11:46:15

品牌	Logo	应用领域
ELM-TECH		/
页数	文件大小	规格书
4页	402K
描述
Single N-channel MOSFET

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中文翻译

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数据手册

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ELM16404EA-S 数据手册

Single N-channel MOSFET

ELM16404EA-S

■General description

■Features

ELM16404EA-S uses advanced trench technology

to provide excellent Rds(on), low gate charge and

operation with gate voltages as low as 1.8V and internal

ESD protection is included.

• Vds=20V

• Id=8.6A (Vgs=10V)

• Rds(on) < 17mΩ (Vgs=10V)

• Rds(on) < 18mΩ (Vgs=4.5V)

• Rds(on) < 24mΩ (Vgs=2.5V)

• Rds(on) < 33mΩ (Vgs=1.8V)

• ESD Rating : 2000V HBM

■Maximum absolute ratings

Parameter

Symbol

Limit

Unit

Note

Drain-source voltage

Gate-source voltage

Vds

Vgs

Ta=25°C

Ta=70°C

8.6

6.8

Continuous drain current

Pulsed drain current

Idm

Ta=25°C

Ta=70°C

2.00

Power dissipation

°C

1.28

Junction and storage temperature range

Tj, Tstg

-55 to 150

■Thermal characteristics

Parameter

Symbol

Rθja

Typ.

Max.

62.5

Unit

Note

Maximum junction-to-ambient

Maximum junction-to-lead

t≤10s

45.0

70.0

33.0

°C/W

Steady-state

110.0

50.0

Rθjl

■Pin configuration

■Circuit

SOT-26(TOP VIEW)

Pin No.

Pin name

DRAIN

GATE

SOURCE

DRAIN

4 - 1

12 3 4

中文翻译

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