Datasheet > ELM16403EA-S

ELM16403EA-S

更新时间： 2025-03-22 12:50:23

品牌	Logo	应用领域
ELM-TECH		/
页数	文件大小	规格书
4页	396K
描述
Single P-channel MOSFET

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中文翻译

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数据手册

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ELM16403EA-S 数据手册

Single P-channel MOSFET

ELM16403EA-S

■General description

■Features

ELM16403EA-S uses advanced trench technology to

provide excellent Rds(on), low gate charge and low gate

resistance.

• Vds=-30V

• Id=-6A (Vgs=-10V)

• Rds(on) < 35mΩ (Vgs=-10V)

• Rds(on) < 58mΩ (Vgs=-4.5V)

■Maximum absolute ratings

Parameter

Symbol

Limit

-30

Unit

Note

Drain-source voltage

Gate-source voltage

Vds

Vgs

Ta=25°C

Ta=70°C

-6

-5

Continuous drain current

Pulsed drain current

Idm

-30

Ta=25°C

Ta=70°C

2.00

Power dissipation

°C

1.44

Junction and storage temperature range

Tj, Tstg

-55 to 150

■Thermal characteristics

Parameter

Symbol

Rθja

Typ.

Max.

62.5

Unit

Note

Maximum junction-to-ambient

Maximum junction-to-lead

t≤10s

47.5

74.0

37.0

°C/W

Steady-state

110.0

50.0

Rθjl

■Pin configuration

■Circuit

SOT-26(TOP VIEW)

Pin No.

Pin name

DRAIN

GATE

SOURCE

DRAIN

4 - 1

12 3 4

中文翻译

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