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ELM16403EA-S PDF预览

ELM16403EA-S

更新时间: 2024-02-03 21:44:40
品牌 Logo 应用领域
ELM-TECH /
页数 文件大小 规格书
4页 396K
描述
Single P-channel MOSFET

ELM16403EA-S 数据手册

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Single P-channel MOSFET  
ELM16403EA-S  
■General description  
■Features  
ELM16403EA-S uses advanced trench technology to  
provide excellent Rds(on), low gate charge and low gate  
resistance.  
• Vds=-30V  
• Id=-6A (Vgs=-10V)  
• Rds(on) < 35mΩ (Vgs=-10V)  
• Rds(on) < 58mΩ (Vgs=-4.5V)  
■Maximum absolute ratings  
Parameter  
Symbol  
Limit  
-30  
Unit  
V
Note  
Drain-source voltage  
Gate-source voltage  
Vds  
Vgs  
±
20  
V
Ta=25°C  
Ta=70°C  
-6  
-5  
Continuous drain current  
Pulsed drain current  
Id  
Idm  
A
A
1
2
1
-30  
Ta=25°C  
Ta=70°C  
2.00  
Power dissipation  
Pd  
W
°C  
1.44  
Junction and storage temperature range  
Tj, Tstg  
-55 to 150  
■Thermal characteristics  
Parameter  
Symbol  
ja  
Typ.  
Max.  
62.5  
Unit  
Note  
Maximum junction-to-ambient  
Maximum junction-to-ambient  
Maximum junction-to-lead  
t≤10s  
47.5  
74.0  
37.0  
°C/W  
°C/W  
°C/W  
1
3
Steady-state  
Steady-state  
110.0  
50.0  
Rθjl  
■Pin configuration  
■Circuit  
D
SOT-26(TOP VIEW)  
Pin No.  
Pin name  
6
5
4
1
2
3
4
5
6
DRAIN  
DRAIN  
GATE  
G
SOURCE  
DRAIN  
DRAIN  
1
2
3
S
4 - 1  

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