EL357(C)-VG

更新时间： 2024-02-07 19:58:58

品牌	Logo	应用领域
亿光 - EVERLIGHT		光电输出元件
页数	文件大小	规格书
10页	237K
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EL357(C)-VG 数据手册

EVERLIGHT ELETCRONICS CO., LTD

Technical Data Sheet

Photocoupler

EL357

Features:

• Current transfer ratio

(CTR:MIN.50% at I_F=5mA ,V_CE=5V)

• Isolation voltage between input and output

(E357: V_iso=3750 V_rms

)

• Subminiature type

(The volume is small than that of conventional

DIP type by as far as 30%)

• Mini-flat package

EL357:1-channel type

• Pb free

• The product itself will remain within RoHS compliant version.

Description

The EL357 contains a gallium arsenic infrared emitting diode optically

coupled to a phototransistor. It is packaged in a 4-pin SMD package

Applications

• Hybrid substrates that require high density mounting

• Programmable controllers

• System appliances, measuring instruments

• Telecommunication

• Electric home appliances, such as fan heaters, etc.

• Signal transmission between circuits of different potentials

and impedances

Device Selection Guide

Chip Material

Part No.

EL357

GaAs

Silicon

Everlight Electronics Co., Ltd.

http:\\www.everlight.com

Rev 2

Page: 1 of 10

Device No：DPC-357-001

Prepared date：07-20-2005

Prepared by：Sam Cheng

12 3 4 5 6 7...10

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