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EL2090CN PDF预览

EL2090CN

更新时间: 2024-01-28 15:56:58
品牌 Logo 应用领域
瑞萨 - RENESAS 放大器光电二极管商用集成电路
页数 文件大小 规格书
4页 33K
描述
1 CHANNEL, VIDEO AMPLIFIER, PDIP8

EL2090CN 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:PLASTIC, DIP-14
针数:14Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.76Is Samacsys:N
标称带宽:100000 kHz商用集成电路类型:VIDEO AMPLIFIER
JESD-30 代码:R-PDIP-T8JESD-609代码:e0
信道数量:1端子数量:8
最高工作温度:75 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
最大压摆率:17 mA最大供电电压 (Vsup):15 V
最小供电电压 (Vsup):5 V表面贴装:NO
温度等级:COMMERCIAL EXTENDED端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:DUAL
Base Number Matches:1

EL2090CN 数据手册

 浏览型号EL2090CN的Datasheet PDF文件第2页浏览型号EL2090CN的Datasheet PDF文件第3页浏览型号EL2090CN的Datasheet PDF文件第4页 
RFH25P08, RFH25P10,  
RFK25P08, RFK25P10  
Semiconductor  
-25A, -100V and -80V, 0.150 Ohm,  
P-Channel Power MOSFETs  
September 1998  
Features  
Description  
• -25A, -100V and -80V  
These are P-Channel enhancement mode silicon gate  
power field effect transistors designed for applications such  
as switching regulators, switching converters, motor drivers,  
relay drivers and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
• r  
= 0.150  
DS(ON)  
[ /Title  
(RFH25  
P08,  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
These types can be operated directly from integrated cir-  
cuits.  
RFH25P  
10,  
Formerly developmental type TA49230.  
Ordering Information  
RFK25P  
08,  
RFK25P  
10)  
/Subject  
(-25A, -  
100V, -  
80V,  
PART NUMBER  
RFH25P08  
PACKAGE  
TO-218AC  
BRAND  
RFH25P08  
Symbol  
D
RFH25P10  
TO-218AC  
TO-204AE  
TO-204AE  
RFH25P10  
RFK25P08  
RFK25P10  
RFK25P08  
G
RFK25P10  
NOTE: When ordering, use the entire part number.  
S
0.150  
Ohm, P-  
Channel  
Power  
MOS-  
FETs)  
/Author  
()  
Packaging  
JEDEC TO -218AC  
JEDEC TO-204AE  
DRAIN  
(FLANGE)  
SOURCE  
DRAIN  
GATE  
DRAIN  
/Key-  
words (-  
25A, -  
100V a-  
80V,  
SOURCE (PIN 2)  
GATE (PIN 1)  
0.150  
Ohm, P-  
Channel  
Power  
MOS-  
FETs)  
/Creator  
()  
/DOCIN  
FO pdf-  
mark  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 1632.1  
Copyright © Harris Corporation 1998  
6-1  

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