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EL02ZW PDF预览

EL02ZW

更新时间: 2024-11-08 20:10:35
品牌 Logo 应用领域
三垦 - SANKEN 超快恢复二极管快速恢复二极管
页数 文件大小 规格书
3页 235K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.5A, Silicon,

EL02ZW 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.67
应用:ULTRA FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:25 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大反向恢复时间:0.04 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

EL02ZW 数据手册

 浏览型号EL02ZW的Datasheet PDF文件第2页浏览型号EL02ZW的Datasheet PDF文件第3页 
SANKEN ELECTRIC CO., LTD.  
EL02Z  
1. Scope  
The present specifications shall apply to an EL02Z .  
2. Outline  
Type  
Silicon Diode (Planar type)  
Structure  
Resin Molded  
Flammability : UL94V-0 (Equivalent)  
Applications  
High Frequency Rectification  
3. Absolute maximum ratings  
Item  
Symbol  
VRSM  
VRM  
IF(AV)  
IFSM  
I2t  
Unit  
V
Rating  
200  
Conditions  
No.  
1
Transient Peak Reverse Voltage  
Peak Reverse Voltage  
Average Forward Current  
Peak Surge Forward Current  
I2t Limiting Value  
2
V
200  
3
A
1.5  
Refer to Derating of 5  
10msec.  
Sinewave 10ms. one shot  
4
A
25  
5
A2s  
°C  
°C  
3.1  
1msec≤t≤10msec  
Junction Temperature  
Storage Temperature  
6
Tj  
-40~+150  
-40~+150  
7
Tstg  
4. Electrical characteristics  
Item  
Symbol  
VF  
Unit  
V
Value  
Conditions  
No.  
1
Forward Voltage Drop  
Reverse Leakage Current  
0.98 max.  
50 max.  
IF=1.5A  
2
IR  
uA  
VR=VRM  
Reverse Leakage Current Under  
High Temperature  
3
4
5
uA  
100 max.  
VR=VRM, Tj=100°C  
HIR  
IF=IRP=100mA  
trr-1  
trr-2  
ns  
ns  
40 max.  
30 max.  
90% Recovery point, Tj=25°C  
IF=100mA, IRP=200mA  
75% Recovery point, Tj=25°C  
Reverse Recovery Time  
Thermal Resistance  
Between Junction and Lead  
θj-l  
°C /W  
20 max.  
040303  
13  
61426-01  

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