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EK02666 PDF预览

EK02666

更新时间: 2024-10-27 22:30:51
品牌 Logo 应用领域
三垦 - SANKEN 二极管
页数 文件大小 规格书
1页 23K
描述
Schottky Barrier Diodes 20V

EK02666 数据手册

  
Schottky Barrier Diodes 20V  
Electrical Characteristics (Ta =25°C)  
Absolute Maximum Ratings  
Others  
Mass  
Parameter  
IFSM  
(A)  
50Hz  
Half-cycle Sinewave  
Single Shot  
Tj  
Tstg  
VF  
(V)  
IR  
(mA)  
IR  
(mA)  
t
(H)  
rr  
(ns)  
Rth (j-  
)
(°C)  
(°C)  
VRM  
(V)  
IF (AV)  
(A)  
Fig.  
Type No.  
VR =VRM  
max  
VR =VRM  
IF  
(A)  
IF  
(mA)  
/IRP  
max  
0.47  
(°C/ W)  
20.0  
17.0  
8.0  
(g)  
0.3  
0.3  
1.2  
Ta  
=
100°C max  
A
B
C
EK 02  
EK 12  
RK 42  
1.0  
2.0  
3.0  
40  
60  
1.0  
2.0  
3.0  
0.25  
0.5  
10  
*
*
100/100  
500/500  
20  
–40 to +150  
20  
20  
100  
100  
1.00  
Under development  
*
EK 02  
EK 12  
RK 42  
VR=20V  
VF—IF Characteristics (Typical)  
VR—IR Characteristics (Typical)  
IFMS Rating  
IF(AV)—T Characteristics  
20  
10  
3
30  
10  
100  
80  
=
T
a
125ºC  
Sinewave  
20ms  
100ºC  
1
2
D.C.  
=
t / T 1/2  
1
60  
60ºC  
27ºC  
0.1  
=
t / T 1/ 3  
40  
20  
0
0.1  
1
0
=
a
=
T
125ºC  
100ºC  
60ºC  
t / T 1/6  
0.01  
0.01  
27ºC  
0.005  
0.001  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7  
Forward Voltage VF (V)  
1
5
10  
50  
105  
110  
115  
120  
125  
(°C)  
130  
0
5
10  
15  
20  
25  
30  
35  
Lead Temperature  
T
Reverse Voltage VR (V)  
Overcurrent Cycles  
External Dimensions  
Fig.  
A
Fig.  
Fig.  
C
B
(Unit: mm)  
1.4 ±0.1  
0.6±0.05  
0.78 ±0.05  
Flammability:  
UL94V-0 or Equivalent  
Cathode Mark  
Cathode Mark  
Cathode Mark  
2.7±0.2  
2.7 ±0.2  
6.5 ±0.2  
79  

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