2W02

更新时间： 2024-01-27 07:47:18

品牌	Logo	应用领域
EIC		整流二极管桥式整流二极管
页数	文件大小	规格书
2页	43K
描述
SILICON BRIDGE RECTIFIERS

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技术参数
数据手册

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2W02 技术参数

生命周期：	Obsolete	包装说明：	O-PBCY-W4
Reach Compliance Code：	compliant	HTS代码：	8541.10.00.80
风险等级：	5.6	配置：	BRIDGE, 4 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	BRIDGE RECTIFIER DIODE
JESD-30 代码：	O-PBCY-W4	最大非重复峰值正向电流：	50 A
元件数量：	4	相数：	1
端子数量：	4	最大输出电流：	2 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	WIRE
端子位置：	BOTTOM	Base Number Matches：	1

2W02 数据手册

SILICON BRIDGE RECTIFIERS

WOB

2W005 - 2W10

PRV : 50 - 1000 Volts

Io : 2.0 Amperes

0.39 (10.0)

0.31 (7.87)

FEATURES :

0.22 (5.59)

0.18 (4.57)

* High case dielectric strength

* High surge current capability

* High reliability

1.00 (25.4)

MIN.

* Low reverse current

* Low forward voltage drop

* Ideal for printed circuit board

0.034 (0.86)

0.028 (0.71)

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated leads solderable per

0.22 (5.59)

0.18 (4.57)

0.22 (5.59)

0.18 (4.57)

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

Dimension in inches and (millimeter)

* Weight : 1.29 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherw ise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL 2W005 2W01 2W02 2W04 2W06 2W08 2W10 UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000 Volts

700 Volts

Maximum DC Blocking Voltage

Maximum Average Forward Current

100

1000 Volts

0.375" (9.5 mm) lead length

Tc = 25 C

I_F(AV)

2.0

Amps.

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Rating for fusing ( t < 8.3 ms. )

I_FSM

1.0

Amps.

I²t

A²S

Maximum Forward Voltage per Diode at I_F= 1.0 Amp.

V_F

Volts

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25 C

I_R

Ta = 100 C

I_R(H)

C_J

Typical Junction Capacitance per Diode (Note 1)

Typical Thermal Resistance (Note 2)

Operating Junction Temperature Range

Storage Temperature Range

C/W

R JA

T_J

- 50 to + 150

T_STG

Notes :

1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.

2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board w ith, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads.

UPDATE : APRIL 23,1998

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