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1B4B1 PDF预览

1B4B1

更新时间: 2024-01-25 19:53:47
品牌 Logo 应用领域
EIC 整流二极管桥式整流二极管
页数 文件大小 规格书
2页 33K
描述
SILICON BRIDGE RECTIFIERS

1B4B1 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:O-PBCY-W4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.81Is Samacsys:N
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:O-PBCY-W4JESD-609代码:e0
最大非重复峰值正向电流:55 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向电流:0.0004 µA子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
Base Number Matches:1

1B4B1 数据手册

 浏览型号1B4B1的Datasheet PDF文件第2页 
SILICON BRIDGE RECTIFIERS  
WOB  
1(B,G,J)4B1  
PRV : 100 - 600 Volts  
Io : 1.5 Ampere  
0.39 (10.0)  
0.31 (7.87)  
0.22 (5.59)  
0.18 (4.57)  
AC  
FEATURES :  
+
-
1.00 (25.4)  
MIN.  
* High case dielectric strength  
* High surge current capability  
* High reliability  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
* Pb / RoHS Free  
0.034 (0.86)  
0.028 (0.71)  
-
MECHANICAL DATA :  
AC  
+
0.22 (5.59)  
0.18 (4.57)  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated leads solderable per  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
AC  
0.22 (5.59)  
0.18 (4.57)  
Dimension in inches and (millimeter)  
* Weight : 1.29 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
1B4B1  
1G4B1  
400  
1J4B1  
RATING  
Maximum Repetitive Peak Reverse Voltage  
Maximum Average Output Rectified Current, Ta = 50°C  
Maximum Peak One Cycle Surge Forward Current  
(Non Repetitive)  
SYMBOL  
VRRM  
UNIT  
100  
600  
V
A
IF(AV)  
1.5  
50 (50 Hz)  
55 (60 Hz)  
1.2  
IFSM  
VF  
A
V
Maximum Forward Voltage at IF = 1.5 A  
Maximum Repetitive Peak Reverse Current  
at VRRM = Rated, Tj = 150°C  
IRRM  
0.4  
mA  
Tj  
Junction Temperature  
-40 to +150  
-40 to +150  
°C  
°C  
TSTG  
Storage Temperature Range  
Page 1 of 2  
Rev. 02 : March 25, 2005  

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