Datasheet > EGP30M

EGP30M

更新时间： 2024-10-01 12:56:55

品牌	Logo	应用领域
森美特 - SUNMATE		二极管功效
页数	文件大小	规格书
2页	360K
描述
3A plug-in fast recovery diode 1000V DO-201 series

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EGP30M 数据手册

EGP30A - EGP30M

GLASS PASSIVATED FAST EFFICIENT RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 3.0 A

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: DO-201AD, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 1.2 grams (approx.)

Mounting Position: Any

DO-201AD

Min

Dim

Max

25.40

7.20

9.50

1.30

5.30

1.20

Marking: Type Number

4.80

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

EGP

30A

EGP

30B

EGP

30D

EGP

30F

EGP

30G

EGP

30J

EGP

30K

EGP

30M

Characteristic

Symbol

Unit

RRM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

100

200

140

300

210

400

280

600

420

800

560

1000

700

R(RMS)

RMS Reverse Voltage

Average Rectified Output Current

(Note 1)

3.0

@T_A= 55°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

125

FSM

115

Forward Voltage

@I_F= 3.0A

1.0

1.3

1.7

Peak Reverse Current

@T_A= 25°C

5.0

120

µA

At Rated DC Blocking Voltage @T_A= 125°C

Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 3)

Typical thermal resistance (NOTE 3)

Storage Temperature Range

^oC / W

STG

-65 to +150

°C

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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