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EGP30K-BP PDF预览

EGP30K-BP

更新时间: 2024-10-01 20:04:39
品牌 Logo 应用领域
美微科 - MCC 功效二极管
页数 文件大小 规格书
4页 143K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

EGP30K-BP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-201AD包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.07其他特性:LOW LEAKAGE CURRENT
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:800 V
最大反向恢复时间:0.075 µs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

EGP30K-BP 数据手册

 浏览型号EGP30K-BP的Datasheet PDF文件第2页浏览型号EGP30K-BP的Datasheet PDF文件第3页浏览型号EGP30K-BP的Datasheet PDF文件第4页 
M C C  
EGP30A  
THRU  
EGP30K  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Superfast recovery time for high efficiency  
3.0 Amp Glass  
Passivated High  
Efficient Rectifiers  
50 to 800 Volts  
Glass passivated cavity-free junction, Plastic case  
Lead Free Finish/RoHS Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
Marking : Cathode band and type number  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL rating 1  
Maximum Ratings  
Operating Temperature: -55OC to +150OC  
DO-201AD  
Storage Temperature: -55OC to +150OC  
Typical Thermal Resistance: 20OC/W Junction to Ambient  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
Maximum DC  
Blocking  
Voltage  
MCC  
Part Number  
Maximum  
RMS Voltage  
D
EGP30A  
EGP30B  
EGP30D  
EGP30F  
EGP30G  
EGP30J  
EGP30K  
50V  
35V  
70V  
50V  
100V  
200V  
300V  
400V  
600V  
800V  
100V  
200V  
300V  
400V  
600V  
800V  
140V  
210V  
280V  
420V  
560V  
A
Cathode  
Mark  
B
Electrical Characteristics @ 25OC Unless Otherwise Specified  
D
Maximum Average  
Forward Current  
IF(AV)  
3.0 A  
T = 55OC  
A
Peak Forward Surge  
Current  
IFSM  
125A  
8.3ms, half sine  
C
Maximum  
Instantaneous  
Forward Voltage  
EGP30A-30D  
EGP30F-30G  
EGP30J-30K  
VF  
1.00V  
1.25V  
1.70V  
I =3.0A  
F
T =25OC  
A
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Reverse Recovery  
Time  
IR  
5.0uA  
T =25OC  
A
INCHES  
MIN  
.287  
.189  
.048  
MM  
MIN  
7.30  
4.80  
1.20  
25.40  
100uA T =125OC  
DIM  
A
B
C
D
MAX  
.374  
.208  
.052  
---  
MAX  
9.50  
5.30  
1.30  
---  
NOTE  
A
1.000  
T =25OC  
A
EGP30A-30G  
EGP30J-30K  
T
rr  
50nS I =0.5A, IR=1.0A,  
F
75nS I =0.25A  
rr  
Typical Junction  
Capacitance  
EGP30A-30D  
EGP30F-30K  
Measured at  
f=1.0MHz  
VR=4.0V  
CJ  
95pF  
75pF  
Note:1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
Revision: 6  
2008/10/30  
1 of 4  

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