Datasheet > EGP30B-B

EGP30B-B

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	74K
描述
Rectifier Diode,

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数据手册

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EGP30B-B 数据手册

M C C

EGP30A

THRU

EGP30K

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

3.0 Amp Glass

Passivated High

Efficient Rectifiers

50 to 800 Volts

•

Superfast recovery time for high efficiency

Glass passivated cavity-free junction, Plastic case



Marking : Cathode band and type number

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Maximum Ratings

•

Operating Temperature: -55^OC to +150^OC

DO-201AD

•

Storage Temperature: -55^OC to +150^OC

•

Typical Thermal Resistance: 20^OC/W Junction to Ambient

Maximum

Recurrent

Peak Reverse

Voltage

Maximum DC

Blocking

Voltage

MCC

Part Number

Maximum

RMS Voltage

EGP30A

EGP30B

EGP30D

EGP30F

EGP30G

EGP30J

EGP30K

50V

35V

70V

50V

100V

200V

300V

400V

600V

800V

100V

200V

300V

400V

600V

800V

140V

210V

280V

420V

560V

Cathode

Mark

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Maximum Average

Forward Current

I_F(AV)

3.0 A

T = 55^OC

Peak Forward Surge

Current

I_FSM

125A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

EGP30A-30D

EGP30F-30G

EGP30J-30K

V_F

1.00V

1.25V

1.70V

I =3.0A

T =25^OC

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Reverse Recovery

Time

I_R

5.0uA

T =25^OC

INCHES

MIN

.287

.189

.048

MIN

7.30

4.80

1.20

25.40

100uA T =125^OC

DIM

MAX

.374

.208

.052

---

MAX

9.50

5.30

1.30

---

NOTE

1.000

T =25^OC

EGP30A-30G

EGP30J-30K

50nS I =0.5A, I_R=1.0A,

75nS I =0.25A

Typical Junction

Capacitance

EGP30A-30D

EGP30F-30K

Measured at

f=1.0MHz

V_R=4.0V

C_J

95pF

75pF

www.mccsemi.com

Revision: 5

2006/10/4

1 of 4

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