5秒后页面跳转
EGP20D PDF预览

EGP20D

更新时间: 2024-04-09 18:58:18
品牌 Logo 应用领域
EIC /
页数 文件大小 规格书
2页 80K
描述
Fast / Super Fast Recovery Rectifiers

EGP20D 数据手册

 浏览型号EGP20D的Datasheet PDF文件第2页 
www.eicsemi.com  
HIGH EFFICIENT RECTIFIERS  
EGP20A - EGP20D  
PRV : 50 - 200 Volts  
Io : 2.0 Amperes  
DO-15  
FEATURES :  
* High current capability  
* High reliability  
1.00 (25.4)  
MIN.  
0.142 (3.6)  
0.102 (2.6)  
* Low reverse current  
* Low forward voltage drop  
* Fast switching for high efficiency  
* Pb / RoHS Free  
0.300 (7.6)  
0.230 (5.8)  
1.00 (25.4)  
MIN.  
MECHANICAL DATA :  
0.034 (0.86)  
0.028 (0.71)  
* Case : DO-15 Molded plastic  
* Epoxy : UL94V-0 rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 0.4 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
EGP  
20A  
EGP  
20B  
EGP  
20C  
EGP  
20D  
RATING  
SYMBOL  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
35  
50  
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
100  
IF(AV)  
IFSM  
2.0  
75  
A
A
0.375"(9.5mm) Lead Length  
Ta = 55 °C  
Peak Forward Surge Current, 8.3ms Single half sine wave  
Superimposed on rated load (JEDEC Method)  
Maximum Peak Forward Voltage at IF = 2.0 A  
VF  
IR  
0.95  
5.0  
50  
V
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 °C  
µA  
µA  
ns  
pf  
IR(H)  
Trr  
Ta = 150 °C  
50  
Maximum Reverse Recovery Time ( Note 1 ) Tj = 25 °C  
Typical Junction Capacitance ( Note 2 )  
Junction Temperature Range  
CJ  
70  
TJ  
- 65 to + 150  
- 65 to + 150  
°C  
°C  
Storage Temperature Range  
TSTG  
Notes :  
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.  
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC  
Page 1 of 2  
Rev. 03 : February 28, 2014  

与EGP20D相关器件

型号 品牌 描述 获取价格 数据表
EGP20D/4E VISHAY Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2

获取价格

EGP20D/4F VISHAY Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2

获取价格

EGP20D/4G VISHAY Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2

获取价格

EGP20D/4H VISHAY Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2

获取价格

EGP20D/51 VISHAY Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2

获取价格

EGP20D/53 VISHAY Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2

获取价格