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EGP20B PDF预览

EGP20B

更新时间: 2024-11-25 17:00:31
品牌 Logo 应用领域
EIC /
页数 文件大小 规格书
2页 80K
描述
Fast / Super Fast Recovery Rectifiers

EGP20B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:compliant风险等级:5.74
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.95 V
JEDEC-95代码:DO-15JESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:75 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大重复峰值反向电压:100 V最大反向电流:5 µA
最大反向恢复时间:0.05 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

EGP20B 数据手册

 浏览型号EGP20B的Datasheet PDF文件第2页 
www.eicsemi.com  
HIGH EFFICIENT RECTIFIERS  
EGP20A - EGP20D  
PRV : 50 - 200 Volts  
Io : 2.0 Amperes  
DO-15  
FEATURES :  
* High current capability  
* High reliability  
1.00 (25.4)  
MIN.  
0.142 (3.6)  
0.102 (2.6)  
* Low reverse current  
* Low forward voltage drop  
* Fast switching for high efficiency  
* Pb / RoHS Free  
0.300 (7.6)  
0.230 (5.8)  
1.00 (25.4)  
MIN.  
MECHANICAL DATA :  
0.034 (0.86)  
0.028 (0.71)  
* Case : DO-15 Molded plastic  
* Epoxy : UL94V-0 rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 0.4 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
EGP  
20A  
EGP  
20B  
EGP  
20C  
EGP  
20D  
RATING  
SYMBOL  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
35  
50  
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
100  
IF(AV)  
IFSM  
2.0  
75  
A
A
0.375"(9.5mm) Lead Length  
Ta = 55 °C  
Peak Forward Surge Current, 8.3ms Single half sine wave  
Superimposed on rated load (JEDEC Method)  
Maximum Peak Forward Voltage at IF = 2.0 A  
VF  
IR  
0.95  
5.0  
50  
V
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 °C  
µA  
µA  
ns  
pf  
IR(H)  
Trr  
Ta = 150 °C  
50  
Maximum Reverse Recovery Time ( Note 1 ) Tj = 25 °C  
Typical Junction Capacitance ( Note 2 )  
Junction Temperature Range  
CJ  
70  
TJ  
- 65 to + 150  
- 65 to + 150  
°C  
°C  
Storage Temperature Range  
TSTG  
Notes :  
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.  
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC  
Page 1 of 2  
Rev. 03 : February 28, 2014  

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EGP20B/62 VISHAY

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Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20B/64 VISHAY

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Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20B/65 VISHAY

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Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2