5秒后页面跳转
EGP20B PDF预览

EGP20B

更新时间: 2023-12-06 20:02:10
品牌 Logo 应用领域
鲁光 - LGE 整流二极管高效整流二极管
页数 文件大小 规格书
2页 1974K
描述
高效整流二极管

EGP20B 数据手册

 浏览型号EGP20B的Datasheet PDF文件第2页 
EGP20A-EGP20K  
High Efficiency Rectifiers  
VOLTAGE RANGE: 50 --- 800 V  
CURRENT: 2.0 A  
Features  
DO - 15  
Low cost  
Diffused junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easilycleaned with Alcohol,Isopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
Mechanical Data  
Case:JEDEC DO--15,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-750,Method 2026  
Dimensions in millimeters  
Polarity: Color band denotes cathode  
Weight: 0.014 ounces,0.39 grams  
Mounting position: Any  
MAXIMUM RAT INGS AND ELECT RICAL CHARACT ERIST ICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
EGP EGP EGP EGP EGP EGP EGP EGP  
20A 20B 20C 20D 20F 20G 20J 20K  
UNITS  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300 400  
210 280  
300 400  
600  
420  
600  
800  
560  
800  
VRRM  
V
V
V
RMS  
Maximum DC blocking voltage  
100  
V
VDC  
Maximum average forw ard rectified current  
A
2.0  
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
superimposed on rated load  
A
75  
IFSM  
@TJ=125  
Maximum instantaneous forw ard voltage  
@ 2.0 A  
0.95  
1.25  
1.7  
V
VF  
IR  
Maximum reverse current  
@TA=25  
5.0  
A
at rated DC blocking voltage @TA=125  
100  
Maximum reverse recovery  
Typical junction capacitance  
(Note1)  
(Note2)  
ns  
50  
trr  
75  
45  
70  
pF  
CJ  
40  
15  
Rθ  
Typical thermal resistance  
Typical thermal resistance  
(Note3)  
(Note 4)  
JA  
/ W  
Rθ  
JL  
Operating junction temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TJ  
Storage temperature range  
TSTG  
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.  
3.Thermal resistance f rom junction to ambient.  
4.Thermal resistance from junction to lead.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

与EGP20B相关器件

型号 品牌 描述 获取价格 数据表
EGP20B/100 VISHAY Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2

获取价格

EGP20B/4E VISHAY Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2

获取价格

EGP20B/51 VISHAY Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2

获取价格

EGP20B/53 VISHAY Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2

获取价格

EGP20B/56 VISHAY Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2

获取价格

EGP20B/58 VISHAY Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2

获取价格