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EGP10G PDF预览

EGP10G

更新时间： 2024-02-18 11:07:56
品牌 Logo 应用领域
森美特 - SUNMATE 二极管局域网
页数 文件大小 规格书
2页 255K
描述
1A plug-in fast recovery diode 400V DO-41 series

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中文翻译

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EGP10G 技术参数

生命周期：Contact ManufacturerReach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.76
Base Number Matches：1

EGP10G 数据手册

 浏览型号EGP10G的Datasheet PDF文件第2页 
EGP10A - EGP10M  
GLASS PASSIVATED FAST EFFICIENT RECTIFIER DIODES  
VOLTAGE RANGE: 50 - 1000V  
CURRENT: 1.0 A  
Features  
Diffused Junction  
!
Ultra-Fast Switching for High Efficiency  
High Current Capability and Low Forward  
Voltage Drop  
!
!
A
B
A
Low Reverse Leakage Current  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
!
!
C
D
Mechanical Data  
Case: DO-41Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Marking: Type Number  
Weight: 0.35 grams (approx.)  
Mounting Position: Any  
!
!
DO-41  
Min  
Dim  
A
Max  
!
!
!
!
25.40  
4.06  
¾
B
5.21  
0.864  
2.72  
C
0.71  
D
2.00  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
For capacitive load, derate current by 20%.  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
EGP  
10A  
EGP EGP EGP  
EGP EGP  
EGP EGP  
10K 10M  
Characteristic  
Symbol  
Unit  
10B  
10D  
10F  
10G  
10J  
RRM  
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RWM  
50  
35  
100  
200  
300  
400  
600  
800  
560  
1000  
700  
V
V
R
V
R(RMS)  
RMS Reverse Voltage  
V
70  
140  
210  
280  
420  
V
A
Average Rectified Output Current  
(Note 1)  
O
I
1.0  
30  
@TA = 55°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
FSM  
I
A
FM  
Forward Voltage  
@IF = 1.0A  
V
1.0  
1.3  
1.7  
V
Peak Reverse Current  
@TA = 25°C  
5.0  
100  
RM  
I
µA  
At Rated DC Blocking Voltage @TA = 100°C  
Reverse Recovery Time (Note 2)  
Typical Junction Capacitance (Note 3)  
Operating Temperature Range  
rr  
t
50  
20  
75  
15  
nS  
pF  
°C  
°C  
j
C
j
T
-65 to +125  
-65 to +150  
STG  
T
Storage Temperature Range  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.  
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
1 of 2  
www.sunmate.tw  
12

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与EGP10G相关器件

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EGP10G.TR FAIRCHILD

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,
EGP10G/100 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10G/23 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10G/4F VISHAY

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10G/4H VISHAY

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10G/51 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10G/53 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10G/54 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10G/56 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
EGP10G/60 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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