EFM104B-HF-W

更新时间： 2024-11-18 12:59:31

品牌	Logo	应用领域
RECTRON		二极管光电二极管
页数	文件大小	规格书
2页	30K
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EFM104B-HF-W 数据手册

EFM101

THRU

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

EFM106

SURFACE MOUNT GLASS PASSIVATED

SUPER FAST SILICON RECTIFIER

VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere

FEATURES

* Glass passivated device

* Ideal for surface mounted applications

* Low leakage current

* Metallurgically bonded construction

* Mounting position: Any

* Weight: 0.057 gram

DO-214AC

MECHANICAL DATA

* Epoxy : Device has UL flammability classification 94V-0

(

)

0.067 1.70

(

)

0.110 2.79

(

)

0.051 1.29

(

0.086 2.18

(

)

0.180 4.57

(

)

0.160 4.06

(

)

0.012 0.305

(

)

0.006 0.152

(

)

0.091 2.31

(

)

0.067 1.70

(

0.059 1.50

(

)

0.008 0.203

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

(

)

0.035 0.89

(

0.004 0.102

(

)

0.209 5.31

(

0.185 4.70

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

RATINGS

SYMBOL

EFM101 EFM102 EFM103 EFM104 EFM105 EFM106

UNITS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Volts

RRM

RMS

100

150

105

150

200

140

200

300

210

300

400

280

400

Volts

Maximum DC Blocking Voltage

Maximum Average Forward Current

100

1.0

Amps

at TA

= 55^oC

Peak Forward Surge Current IFM (surge): 8.3 ms single half

sine-wave superimposed on rated load (JEDEC method)

FSM

Typical Junction Capacitance (Note 2)

⁰C

Operating and Storage Temperature Range

, TSTG

-65 to + 175

ELECTRICAL CHARACTERISTICS (At T

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

= 25^oC unless otherwise noted)

SYMBOL

EFM101 EFM102 EFM103 EFM104 EFM105 EFM106

0.95 1.25

UNITS

Volts

Maximum DC Reverse Current

= 25^oC

=150^oC

5.0

uAmps

at Rated DC Blocking Voltage

Maximum Reverse Recovery Time (Note 1)

trr

nSec

NOTES : 1. Test Conditions: I

=0.5A, I

R=-1.0A, IRR=-0.25A.

2001-4

2. Measured at 1 MH

and applied reverse voltage of 4.0 volts.

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