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EFF20B PDF预览

EFF20B

更新时间: 2024-11-09 06:56:15
品牌 Logo 应用领域
快达 - CRYDOM 电源电路
页数 文件大小 规格书
5页 1075K
描述
Power Modules

EFF20B 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-XUFM-X9针数:9
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.16
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE关态电压最小值的临界上升速率:500 V/us
最大直流栅极触发电流:150 mA最大直流栅极触发电压:3 V
快速连接描述:3G螺丝端子的描述:6AK
JESD-30 代码:R-XUFM-X9最大漏电流:20 mA
通态非重复峰值电流:1500 A元件数量:3
端子数量:9最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
重复峰值反向电压:400 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子面层:COPPER
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

EFF20B 数据手册

 浏览型号EFF20B的Datasheet PDF文件第2页浏览型号EFF20B的Datasheet PDF文件第3页浏览型号EFF20B的Datasheet PDF文件第4页浏览型号EFF20B的Datasheet PDF文件第5页 
EF Series  
High Thermal Efficiency  
Complete Power Control  
Circuits In a Single Package  
AVAILABLE OPTIONS  
ELECTRICAL SPECIFICATIONS  
Description  
Symbol  
D
50 A  
E
75 A  
F
100 A  
G
125 A  
Maximum DC Output Current (Tc = 85°C) (Single Phase Rating)  
ID  
Maximum Voltage Drop @ Amps Peak  
1.7V @ 50A  
-40 - 125°C  
100A/µs  
1.85V @ 75A  
-40 - 125°C  
100A/µs  
1.4V @ 100A  
-40 - 125°C  
100A/µs  
1.55V @ 125A  
-40 - 125°C  
100A/µs  
VF  
Operating Junction Temperature Range  
TJ  
Critical Rate of Rise of On-State Current @ TJ=125°C  
Critical Rate of Rise of Off-State Voltage [V/µs]  
di/dt  
dv/dt  
500V/µs  
500V/µs  
500V/µs  
500V/µs  
400 (120 VAC)  
600 (240 VAC)  
800 (280 VAC)  
Repetitive Peak Reverse Voltage (AC Line Nominal) [Vpk]  
VRRM  
1200 (480 VAC)  
1400 (530 VAC)  
600  
Maximum Non-Repetitive Surge Current (1/2 Cycle, 60 Hz) [A]  
Maximum I²T for Fusing (t=8.3ms) [A²sec]  
400  
670  
1500  
9340  
150  
1950  
15800  
150  
ITSM  
I2T  
1500  
80  
Minimum Required Gate Current to Trigger @ 25°C [mA]  
Minimum Required Gate Voltage to Trigger @ 25°C [V]  
Average Gate Power [W]  
60  
IGT  
2.5  
3.0  
3.0  
3.0  
VGT  
0.5  
0.5  
0.5  
0.5  
PG(AV)  
VGM  
RJC  
Maximum Peak Reverse Gate Voltage [V]  
5.0  
5.0  
5.0  
5.0  
Maximum Thermal Resistance, Junction to Ceramic Base per Chip  
Isolation Voltage [Vrms]  
0.8°C/W  
2500  
0.7°C/W  
2500  
0.36°C/W  
2500  
0.3°C/W  
2500  
VISOL  

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