Datasheet > EEV-TG2A101M

EEV-TG2A101M

更新时间： 2024-09-14 12:50:55

品牌	Logo	应用领域
威讯 - RFMD		放大器功率放大器
页数	文件大小	规格书
14页	1806K
描述
30W GaN WIDEBAND POWER AMPLIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EEV-TG2A101M 数据手册

RF3931

30W GaN WIDEBAND POWER AMPLIFIER

Package Style: Hermetic 2-Pin Flanged Ceramic

Features

RF IN

VGQ

Pin 1 (CUT)

RF OUT

VDQ

Pin 2



Broadband Operation DC to

3.5GHz

Advanced GaN HEMT

Technology

GND

BASE

Advanced Heat-Sink

Technology



Gain = 15dB at 2GHz

48V Operation Typical

Performance at 900MHz

• Output Power 50W

• Drain Efficiency 65%

• -40°C to 85°C Operation

Functional Block Diagram

Product Description

The RF3931 is a 48V 30W high power discrete amplifier designed for commercial

wireless infrastructure, cellular and WiMAX infrastructure, industrial/scien-

tific/medical, and general purpose broadband amplifier applications. Using an

advanced high power density Gallium Nitride (GaN) semiconductor process, these

high-performance amplifiers achieve high efficiency and flat gain over a broad fre-

quency range in a single amplifier design. The RF3931 is an unmatched GaN tran-

sistor packaged in a hermetic, flanged ceramic package. This package provides

excellent thermal stability through the use of advanced heat sink and power dissi-

pation technologies. Ease of integration is accomplished through the incorporation

of simple, optimized matching networks external to the package that provide wide-

band gain and power performance in a single amplifier.

Applications



Commercial Wireless

Infrastructure



Cellular and WiMAX

Infrastructure



Civilian and Military Radar

General Purpose Broadband

Amplifiers



Public Mobile Radios

Industrial, Scientific and

Medical

Ordering Information

RF3931S2

RF3931SB

RF3931SQ

RF3931SR

RF3931TR7

2-Piece sample bag

5-Piece bag

25-Piece bag

100 Pieces on 7” short reel

750 Pieces on 7” reel

RF3931PCK-411 Fully assembled evaluation board optimized for 2.14GHz; 48V

Optimum Technology Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

BiFET HBT



RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

DS120406

1 of 14

12 3 4 5 6 7...14

中文翻译

下载PDF

与EEV-TG2A101M相关器件

型号	品牌	获取价格	描述	数据表
EEVTG2A101V	PANASONIC	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 100V, 20% +Tol, 20% -Tol, 100u
EEVTG2A220P	PANASONIC	获取价格	Aluminum Electrolytic Capacitor/TG
EEVTG2A220UP	PANASONIC	获取价格	Aluminum Electrolytic Capacitor/TG
EEVTG2A221M	PANASONIC	获取价格	Aluminum Electrolytic Capacitor/TG
EEVTG2A330P	PANASONIC	获取价格	Aluminum Electrolytic Capacitor/TG
EEVTG2A331M	PANASONIC	获取价格	Aluminum Electrolytic Capacitor/TG
EEVTG2A331V	PANASONIC	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 100V, 20% +Tol, 20% -Tol, 330u
EEVTG2A470Q	PANASONIC	获取价格	Aluminum Electrolytic Capacitor/TG
EEVTG2A470V	PANASONIC	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 100V, 20% +Tol, 20% -Tol, 47uF
EEVVS-BP1A220VR	PANASONIC	获取价格	CAP,AL2O3,22UF,10VDC,20% -TOL,20% +TOL

与EEV-TG2A101M相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

80
AIC1781A 电池充电控制器深度解析
2024-09-03

70
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

100
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

117

产品中心

服务支持

精选活动

关于我们

帮助中心

EEV-TG2A101M

EEV-TG2A101M 数据手册

与EEV-TG2A101M相关器件

与EEV-TG2A101M相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

EEV-TG2A101M

EEV-TG2A101M 数据手册

与EEV-TG2A101M相关器件

与EEV-TG2A101M相关文章

您还可以找

您在本页遇到什么问题？