Datasheet > EEU-FC2A100

EEU-FC2A100

更新时间： 2024-11-04 12:50:55

品牌	Logo	应用领域
威讯 - RFMD		脉冲
页数	文件大小	规格书
11页	773K
描述
380W GaN WIDEBAND PULSED

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EEU-FC2A100 数据手册

RF3928B

380W GaN

WIDEBAND

PULSED

POWER AMPLI-

FIER

RF3928B

380W GaN WIDEBAND PULSED

POWER AMPLIFIER

Package: Hermetic 2-Pin, Flanged Ceramic

Features

 Wideband Operation 2.8GHz to

3.4GHz

RF IN

Pin 1 (CUT)

RF OUT

Pin 2

 Advanced GaN HEMT Technology

 Advanced Heat-Sink Technology

 Supports Multiple Pulse

Conditions

GND

BASE

 10% to 20% Duty Cycle

 100s to 300s Pulse Width

 Integrated Matching

Components for High Terminal

Impedances

Functional Block Diagram

 65V Operation Typical

Performance

Product Description

 Pulsed Output Power 380W

 Small Signal Gain 13dB

 Drain Efficiency 50%

 -40°C to 85°C Operating

Temperature

The RF3928B is a 65V 380W high power discrete amplifier designed for S-Band

pulsed radar, Air Traffic Control and Surveillance, and general purpose broadband

amplifier applications. Using an advanced high power density Gallium Nitride (GaN)

semiconductor process, these high-performance amplifiers achieve high output

power, high efficiency and flat gain over a broad frequency range in a single pack-

age. The RF3928B is a matched GaN transistor packaged in a hermetic, flanged

ceramic package. This package provides excellent thermal stability through the use

of advanced heat sink and power dissipation technologies. Ease of integration is

accomplished through the incorporation of simple, optimized matching networks

external to the package that provide wideband gain and power performance in a

single amplifier.

Applications

 Radar

^Air Traffic Control and

Surveillance

 General Purpose Broadband

Amplifiers

Ordering Information

RF3928BS2

RF3928BSB

RF3928BSQ

RF3928BSR

RF3928BTR13

2-Piece sample bag

5-Piece bag

25-Piece reel

50 Pieces on 7” short reel

250 Pieces on 13” reel

RF3928B99PCBA-410 Fully assembled evaluation board 2.8GHz to 3.4GHz;

65V operation

Optimum Technology Matching^®Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

BiFET HBT



RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

DS120503

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与EEU-FC2A100相关器件

型号	品牌	获取价格	描述	数据表
EEUFC2A100(B)	PANASONIC	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 100V, 20% +Tol, 20% -Tol, 10uF
EEUFC2A100B	PANASONIC	获取价格	FC-A
EEUFC2A100E	PANASONIC	获取价格	FC-A
EEUFC2A100H	PANASONIC	获取价格	FC-A
EEUFC2A101	PANASONIC	获取价格	Aluminum Electrolytic Capacitors/ FC
EEUFC2A101B	PANASONIC	获取价格	FC-A
EEUFC2A101L	PANASONIC	获取价格	Aluminum Electrolytic Capacitors/ FC
EEUFC2A101LE	PANASONIC	获取价格	FC-A
EEUFC2A120	PANASONIC	获取价格	Aluminum Electrolytic Capacitors/ FC
EEU-FC2A120	PANASONIC	获取价格	Aluminum Electrolytic Capacitors/ FC

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