Datasheet > EE-SX1160-W11

EE-SX1160-W11

更新时间： 2024-02-27 00:44:38

品牌	Logo	应用领域
欧姆龙 - OMRON		输出元件光电
页数	文件大小	规格书
2页	227K
描述
Transistor Output Slotted Switch,

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技术参数
数据手册

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EE-SX1160-W11 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	Factory Lead Time：	6 weeks 2 days
风险等级：	2.3	光电设备类型：	TRANSISTOR OUTPUT SLOTTED SWITCH
Base Number Matches：	1

EE-SX1160-W11 数据手册

E^PhE^oto-^mS^icX^ros1^en1^s6^or0^(T-^rW^ansm1ⁱ1^ssive)

Be sure to read Precautions on page 24.

■ Dimensions

Note: All units are in millimeters unless otherwise indicated.

■ Features

• Wide model with a 9.5-mm-wide slot.

• Pre-wired Sensors (AWG28).

• Solder-less lead wire connection to increase reliability.

31.75 0.2

Four, R1

25.4 ^0.15

Optical axis

■ Absolute Maximum Ratings (Ta = 25°C)

^0.25.2 ^0.2

Item

Symbol

I_F

Rated value

Four, C0.3

Two, 3.2 0.15 dia. holes

Emitter

Forward current

50 mA

(see note 1)

18.9 0.2

Detector

Emitter

1.1 ^0.1

9.5 0.2

Sensing

Pulse forward cur- I_FP

rent

1 A

(see note 2)

1.1 0.1

window

Optical axis

Two, C0.8

Reverse voltage

V_R

4 V

15.5 0.2

12.7 ^0.2

13.9 0.1

12 0.1

13.9 ^0.1

Detector

Collector–Emitter

voltage

V_CEO

30 V

12 0.1

Emitter–Collector

voltage

V_ECO

5 V

3.2 ^0.1

610MIN.

Collector current

I_C

20 mA

Cross section B-B

Cross section A-A

Collector dissipa-

tion

P_C

100 mW

(see note 1)

Ambient tem- Operating

Topr

Tstg

–25°C to 80°C

–25°C to 85°C

perature

Internal Circuit

Storage

Note: 1. Refer to the temperature rating chart if the ambient temper-

ature exceeds 25°C.

Unless otherwise specified, the

tolerances are as shown below.

2. The pulse width is 10 μs maximum with a frequency of

100 Hz.

Dimensions

3 mm max.

Tolerance

0.3

3. If you mount the Sensor with screws, use M3 screws, and

flat washers and use a tightening torque of 0.5 N·m max.

Terminal No.

Name

Anode

3 < mm ≤ 6

0.375

0.45

6 < mm ≤ 10

Cathode

Collector

10 < mm ≤ 18

18 < mm ≤ 30

0.55

0.65

Emitter

■ Electrical and Optical Characteristics (Ta = 25°C)

Item

Symbol

Value

1.2 V typ., 1.5 V max.

0.01 μA typ., 10 μA max.

920 nm typ.

Condition

Emitter

Forward voltage

Reverse current

Peak emission wavelength

Light current

V_F

I_R

I_F= 30 mA

V_R= 4 V

λ_P

I_L

I_F= 20 mA

Detector

3.5 mA min., 16 mA max.

2 nA typ., 200 nA max.

---

I_F= 20 mA, V_CE= 10 V

V_CE= 10 V, 0 lx

---

Dark current

I_D

Leakage current

I_LEAK

Collector–Emitter saturated volt- V_CE(sat)

age

0.15 V typ., 0.4 V max.

I_F= 20 mA, I_L= 0.1 mA

Peak spectral sensitivity wave-

length

λ_P

850 nm typ.

V_CE= 10 V

Rising time

Falling time

4 μs typ.

V_CC= 5 V, R_L= 100 Ω, I_L= 5 mA

150

EE-SX1160-W11 Photomicrosensor (Transmissive)

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