Datasheet > EE-SPY415

EE-SPY415

更新时间： 2024-09-22 21:54:51

品牌	Logo	应用领域
其他 - ETC		光电传感器换能器
页数	文件大小	规格书
3页	212K
描述
Photomicrosensor

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中文翻译

获取价格

数据手册

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EE-SPY415 数据手册

Photomicrosensor

EE-SPY415

(Reflective)

Dimensions

Features

Note: All units are in millimeters unless otherwise indicated.

• Photo IC circuitry greatly improves response time.

• Pulse modulation effectively reduces external light

interference.

Lot No.

Part Number

N A P J A

• Convergent technology ensures enhanced sensing area.

2.5

Vcc

S - - P Y E 4 E 1 5

Φ3.2

hole

2.1

OUTPUT

GND

Absolute Maximum Ratings

Φ3.8 hole

Max 12

2 1

(Ta = 25°C)

0.4

Item

Symbol

Vcc

Vout

Iout

Rated value

7 VDC

16 V

171825-3

(Amp

Supply voltage

Japan)

3.5±0.2

Output voltage

-- 0 . 1

Φ3

26.5±0.2

Φ3.2 hole

3.5

Output current

30 mA

9.6

Operating temperature

Storage temperature

Topr

Tstg

-- 1 0 °C to 60°C

-- 4 0 °C to 85°C

3.5±0.2

Ordering Information

Description

Part number

EE-SPY415

Photomicrosensor (Reflective)

Electrical and Optical Characteristics (Ta = 25°C, Vcc = 12 V±10%)

Item

Symbol

Unit

Test

Limits

Typ

-- --

Conditions

Min

-- --

Max

Consumption current

With/without object

I = 20 mA with object

OUT

Low level output voltage

High level output voltage

-- --

by -- --

0.4

-- --

OUT

RL=1 KΩ

0.9

Without object

Response delay time

(See Note.)

tPLH

tPHL

-- --

V =V

OUT

RL=1 KΩ

Note: Response delay time is defined as below.

With object

Without object

OUT

Output Voltage

GND

tPHL

tPLH

212

12 3

中文翻译

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