Datasheet > 存储 > DRAM> EDJ1108EJBG

EDJ1108EJBG

更新时间： 2024-11-28 12:51:35

品牌	Logo	应用领域
尔必达 - ELPIDA		时钟
页数	文件大小	规格书
32页	525K
描述
Differential clock inputs

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中文翻译

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数据手册

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EDJ1108EJBG 数据手册

COVER

PRELIMINARY DATA SHEET

1G bits DDR3L SDRAM

EDJ1108EJBG (128M words × 8 bits)

EDJ1116EJBG (64M words × 16 bits)

Specifications

Features

• Density: 1G bits

• Organization

• Double-data-rate architecture: two data transfers per

clock cycle

• The high-speed data transfer is realized by the 8 bits

prefetch pipelined architecture

• Bi-directional differential data strobe (DQS and /DQS)

is transmitted/received with data for capturing data at

the receiver

• DQS is edge-aligned with data for READs; center-

aligned with data for WRITEs

• Differential clock inputs (CK and /CK)

— 16M words × 8 bits × 8 banks (EDJ1108EJBG)

— 8M words × 16 bits × 8 banks (EDJ1116EJBG)

• Package

— 78-ball FBGA (EDJ1108EJBG)

— 96-ball FBGA (EDJ1116EJBG)

— Lead-free (RoHS compliant) and Halogen-free

• Power supply: 1.35V (typ)

— VDD = 1.283V to 1.45V

• DLL aligns DQ and DQS transitions with CK transitions

— Backward compatible for VDD, VDDQ

= 1.5V 0.075V

• Commands entered on each positive CK edge; data

and data mask referenced to both edges of DQS

• Data rate

• Data mask (DM) for write data

— 1866Mbps/1600Mbps/1333Mbps (max)

• 1KB page size (EDJ1108EJBG)

— Row address: A0 to A13

— Column address: A0 to A9

• 2KB page size (EDJ1116EJBG)

— Row address: A0 to A12

• Posted /CAS by programmable additive latency for

better command and data bus efficiency

• On-Die Termination (ODT) for better signal quality

— Synchronous ODT

— Dynamic ODT

— Asynchronous ODT

— Column address: A0 to A9

• Eight internal banks for concurrent operation

• Burst length (BL): 8 and 4 with Burst Chop (BC)

• Burst type (BT):

• Multi Purpose Register (MPR) for pre-defined pattern

read out

• ZQ calibration for DQ drive and ODT

• /RESET pin for Power-up sequence and reset function

• SRT range:

— Sequential (8, 4 with BC)

— Normal/extended

— Interleave (8, 4 with BC)

• Programmable Output driver impedance control

• Seamless BL4 access with bank-grouping

— Applied only for DDR3-1333 and 1600

• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11, 13

• /CAS Write Latency (CWL): 5, 6, 7, 8, 9

• Precharge: auto precharge option for each burst

access

• Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)

• Refresh: auto-refresh, self-refresh

• Refresh cycles

— Average refresh period

7.8µs at 0°C ≤ TC ≤ +85°C

3.9µs at +85°C < TC ≤ +95°C

• Operating case temperature range

— TC = 0°C to +95°C

Document. No. E1949E11 (Ver. 1.1)

Date Published September 2012 (K) Japan

Printed in Japan

URL: http://www.elpida.com

12 3 4 5 6 7...32

中文翻译

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与EDJ1108EJBG相关器件

型号	品牌	获取价格	描述	数据表
EDJ1108EJBG-DJ-F	ELPIDA	获取价格	Differential clock inputs
EDJ1108EJBG-GN-F	ELPIDA	获取价格	Differential clock inputs
EDJ1108EJBG-JS-F	ELPIDA	获取价格	Differential clock inputs
EDJ1116BABG	ELPIDA	获取价格	1G bits DDR3 SDRAM
EDJ1116BABG-8A-E	ELPIDA	获取价格	1G bits DDR3 SDRAM
EDJ1116BABG-8C-E	ELPIDA	获取价格	1G bits DDR3 SDRAM
EDJ1116BABG-AC-E	ELPIDA	获取价格	1G bits DDR3 SDRAM
EDJ1116BABG-AE-E	ELPIDA	获取价格	1G bits DDR3 SDRAM
EDJ1116BABG-AG-E	ELPIDA	获取价格	1G bits DDR3 SDRAM
EDJ1116BABG-DG-E	ELPIDA	获取价格	1G bits DDR3 SDRAM

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