Datasheet > EDI8G32512C25MZI

EDI8G32512C25MZI

更新时间： 2024-11-17 07:12:47

品牌	Logo	应用领域
WEDC		静态存储器
页数	文件大小	规格书
8页	102K
描述
SRAM,

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中文翻译

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EDI8G32512C25MZI 数据手册

EDI8F32512C

512Kx32 Static RAM CMOS, High Speed Module

FEATURES

DESCRIPTION

ꢀ

512Kx32 bit CMOS Static

Random Access Memory

The EDI8F32512C is a high speed 16 megabit Static RAM

module organized as 512K words by 32 bits. This module is

constructed from four 512Kx8 Static RAMs in SOJ packages

on an epoxy laminate (FR4) board.

ꢀ

Access Times: 15, 20, and 25ns

Individual Byte Selects

Fully Static, No Clocks

TTL Compatible I/O

Four chip enables (EØ-E3) are used to independently

enable the four bytes. Reading or writing can be executed on

individual bytes or any combination of multiple bytes through

proper use of selects.

ꢀ

High Density Package

The EDI8F32512C is offered in 72 pin ZIP and 72 lead SIMM

packages, which enable 16 megabits of memory to be placed

in less than 1.3 square inches of board space.

ꢀ

72 Pin ZIP, No. 173

72 lead SIMM, No. 174 (Gold Option)

Common Data Inputs and Outputs

All inputs and outputs are TTL compatible and operate from

a single 5V supply. Fully asynchronous circuitry requires no

clocks or refreshing for operation and provides equal access

and cycle times for ease of use.

Single +5V ( 10ꢀ) Supply Operation

Note: Consult factory for availability of:

• RoHS compliant products

Pins PD1- PD4, are used to identify module memory density in

applications where alternate modules can be interchanged.

• Vendor source control options

• Industrial temperature option

FIG. 1

Pin Names

A0-A18

E0#-E3#

Address Inputs

Chip Enables

Write Enable

Output Enable

Pin Conﬁgurations and Block Diagram

PD2

V^SS

PD1

DQ8

DQ9

DQ10

DQ11

PD3

PD0

DQ0

DQ1

DQ2

DQ3

V^CC

DQ4

DQ5

DQ6

DQ7

DQ0-DQ31

Common Data

Input/Output

V_CC

V_SS

Power (+5V 10ꢀ%

Ground

No Connectiona

DQ12

DQ13

DQ14

DQ15

V^SS

A0-A18

A15

E1#

A14

E0#

512K

E3#

A17

DQ24

DQ25

DQ26

DQ27

V^CC

DQ28

DQ29

DQ30

DQ31

A18

E2# 38

A16 40

V^SS

DQ16 44

DQ17 46

DQ18 48

DQ19 50

A10 52

A11 54

A12 56

A13 58

DQ20 60

DQ21 62

DQ22 64

DQ23 66

DQ0-DQ7

E0#

512K

DQ8-DQ15

DQ16-DQ23

DQ24-DQ31

E1#

E2#

512K

V^SS

NC 70

NC 72

512K

PD0, PD1, PD3= OPEN

PD2= VSS

E3#

8G32512C Pin Config.

8G32512C Blk Dia.

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

March 2006

Rev. 9

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5 6 7 8

中文翻译

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与EDI8G32512C25MZI相关器件

型号	品牌	获取价格	描述	数据表
EDI8G32512C25MZI-G	WEDC	获取价格	512Kx32 Static RAM CMOS, High Speed Module
EDI8G32512C35MMC	ETC	获取价格	x32 SRAM Module
EDI8G32512C-MM	ETC	获取价格	SRAM Modules
EDI8G32512V25MMC	WEDC	获取价格	SRAM Module, 512KX32, 25ns, CMOS, SIMM-72
EDI8L21664V	ETC	获取价格	External SRAM Memory Solution
EDI8L21664V10BC	WEDC	获取价格	SRAM Module, 128KX16, 10ns, CMOS, PBGA74, 15 X 15 MM, MO-151, BGA-74
EDI8L21664V12BC	WEDC	获取价格	SRAM Module, 128KX16, 12ns, CMOS, PBGA74, 15 X 15 MM, MO-151, BGA-74
EDI8L21664V15BC	ETC	获取价格	x16 SRAM Module
EDI8L21664V15BI	WEDC	获取价格	SRAM Module, 128KX16, 15ns, CMOS, PBGA74, 15 X 15 MM, MO-151, BGA-74
EDI8L21664V-BC	ETC	获取价格	TMS320C5000 Family

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