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EDI88512CA20RJIG

更新时间： 2023-01-02 14:14:08
品牌 Logo 应用领域
WEDC 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 314K
描述
Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, SOJ-36

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中文翻译

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EDI88512CA20RJIG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOJ
包装说明：SOJ,针数：36
Reach Compliance Code：unknown风险等级：5.44
最长访问时间：20 nsJESD-30 代码：R-PDSO-J36
长度：23.495 mm内存密度：4194304 bit
内存集成电路类型：STANDARD SRAM内存宽度：8
功能数量：1端子数量：36
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：512KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOJ
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified座面最大高度：3.7592 mm
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：J BEND端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：10.16 mmBase Number Matches：1

EDI88512CA20RJIG 数据手册

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EDI88512CA-XMXG  
WPS512K8X-XRJXG  
White Electronic Designs  
512Kx8 Plastic Monolithic SRAM CMOS  
WEDC's ruggedized plastic 512Kx8 SRAM that allows  
the user to capitalize on the cost advantage of using a  
plastic component while not sacrificing all of the reliability  
available in a full military device.  
FEATURES  
■
512Kx8 bit CMOS Static  
■
Random Access Memory  
Extended temperature testing is performed with the test  
patterns developed for use on WEDC’s fully compliant  
512Kx8 SRAMs. WEDC fully characterizes devices  
to determine the proper test patterns for testing at  
temperature extremes. This is critical because the  
operating characteristics of device change when it is  
operated beyond the commercial guarantee a device that  
operates reliably in the field at temperature extremes.  
Users of WEDC’s ruggedized plastic benefit from WEDC’s  
extensive experience in characterizing SRAMs for use in  
military systems.  
• Access Times of 17, 20, 25ns  
• Data Retention Function (LPA version)  
• Extended Temperature Testing  
• Data Retention Functionality Testing  
36 lead JEDEC Approved Revolutionary Pinout  
• Plastic SOJ (Package 319)  
■
■
■
Single +5V (±10%) Supply Operation  
RoHS compliant  
WEDC ensures Low Power devices will retain data in Data  
Retention mode by characterizing the devices to determine  
the appropriate test conditions. This is crucial for systems  
operating at -40°C or below and using dense memories  
such as 512Kx8s.  
WEDC’s ruggedized plastic SOJ is footprint compatible  
with WEDC’s full military ceramic 36 pin SOJ.  
FIG. 1 – PIN CONFIGURATION  
PIN Description  
TOP VIEW  
I/O0-7  
Data Inputs/Outputs  
Address Inputs  
Write Enables  
Chip Selects  
A0-18  
WE#  
CS#  
OE#  
VCC  
A0  
A1  
1
2
3
4
5
6
7
8
9
36 NC  
35 A18  
34 A17  
33 A16  
32 A15  
31 OE#  
30 I/O7  
29 I/O6  
28 VSS  
27 VCC  
26 I/O5  
25 I/O4  
24 A14  
23 A13  
22 A12  
21 A11  
20 A10  
19 NC  
A2  
A3  
A4  
CS#  
I/O0  
I/O1  
VCC  
Output Enable  
Power (+5V ±10%)  
Ground  
BLOCK DIAGRAM  
36pin  
VSS  
VSS 10  
I/O2 11  
I/O3 12  
WE# 13  
A5 14  
Revolutionary  
NC  
Not Connected  
Memory Array  
A6 15  
A7 16  
A8 17  
Address  
Buffer  
Address  
Decoder  
I/O  
A
Ø-18  
I/OØ-7  
Circuits  
A9 18  
WE#  
CS#  
OE#  
December 2008  
Rev. 7  
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
12345678

中文翻译

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与EDI88512CA20RJIG相关器件

型号 品牌 获取价格 描述 数据表
EDI88512CA-20RJIG MERCURY

获取价格

 		Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, REVOLUTIONARY, SOJ-36
EDI88512CA-20RJMG MERCURY

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 		Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, REVOLUTIONARY, SOJ-36
EDI88512CA20TB MERCURY

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 		Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88512CA20TB MICROSEMI

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 		Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88512CA20TC ETC

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 		x8 SRAM
EDI88512CA20TI MERCURY

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 		Standard SRAM, 512KX8, 20ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88512CA20TM ETC

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 		x8 SRAM
EDI88512CA25B32B MICROSEMI

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 		Standard SRAM, 512KX8, 25ns, CMOS, CDSO32, CERAMIC, DFP-32
EDI88512CA25B32C MICROSEMI

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 		Standard SRAM, 512KX8, 25ns, CMOS, CDSO32, CERAMIC, DFP-32
EDI88512CA25B32I MICROSEMI

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 		Standard SRAM, 512KX8, 25ns, CMOS, CDSO32, CERAMIC, DFP-32

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