生命周期: | Obsolete | 包装说明: | SOJ, |
Reach Compliance Code: | unknown | 风险等级: | 5.59 |
Is Samacsys: | N | 最长访问时间: | 45 ns |
JESD-30 代码: | R-CDSO-J32 | 长度: | 21.082 mm |
内存密度: | 1048576 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 128KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | SOJ | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 并行/串行: | PARALLEL |
座面最大高度: | 3.937 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | J BEND |
端子节距: | 1.27 mm | 端子位置: | DUAL |
宽度: | 11.05 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EDI88130CS45NM | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 45ns, CMOS, CDSO32, CERAMIC, SOJ-32 | |
EDI88130CS45TB | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 45ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88130CS45TC | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 45ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88130CS45TI | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 45ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88130CS45TM | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 45ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88130CS55CB | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88130CS55CC | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88130CS55CI | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88130CS55CM | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88130CS55FB | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 55ns, CMOS, CDFP32, CERAMIC, DFP-32 |