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EDE5116AFSE PDF预览

EDE5116AFSE

更新时间: 2024-11-07 22:49:15
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器双倍数据速率
页数 文件大小 规格书
65页 654K
描述
512M bits DDR2 SDRAM (32M words x 16 bits)

EDE5116AFSE 数据手册

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DATA SHEET  
512M bits DDR2 SDRAM  
EDE5116AFSE (32M words × 16 bits)  
Description  
Features  
The EDE5116AFSE is a 512M bits DDR2 SDRAM  
Power supply: VDD, VDDQ = 1.8V ± 0.1V  
organized as 8,388,608 words × 16 bits × 4 banks.  
It is packaged in 84-ball FBGA (µBGA) package.  
Double-data-rate architecture: two data transfers per  
clock cycle  
Bi-directional, differential data strobe (DQS and  
/DQS) is transmitted/received with data, to be used in  
capturing data at the receiver  
DQS is edge aligned with data for READs: center-  
aligned with data for WRITEs  
Differential clock inputs (CK and /CK)  
DLL aligns DQ and DQS transitions with CK  
transitions  
Commands entered on each positive CK edge: data  
and data mask referenced to both edges of DQS  
Four internal banks for concurrent operation  
Data mask (DM) for write data  
Burst lengths: 4, 8  
/CAS Latency (CL): 3, 4, 5  
Auto precharge operation for each burst access  
Auto refresh and self refresh modes  
Average refresh period  
7.8µs at 0°C TC ≤ +85°C  
3.9µs at +85°C < TC ≤ +95°C  
SSTL_18 compatible I/O  
Posted CAS by programmable additive latency for  
better command and data bus efficiency  
Off-Chip-Driver Impedance Adjustment and On-Die-  
Termination for better signal quality  
/DQS can be disabled for single-ended Data Strobe  
operation.  
FBGA (µBGA) package with lead free solder  
(Sn-Ag-Cu)  
RoHS compliant  
Document No. E0705E20 (Ver. 2.0)  
Date Published July 2005 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2005  

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