Datasheet > EDE5116ABSE

EDE5116ABSE

更新时间： 2024-11-07 22:34:19

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器双倍数据速率
页数	文件大小	规格书
66页	671K
描述
512M bits DDR2 SDRAM

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EDE5116ABSE 数据手册

DATA SHEET

512M bits DDR2 SDRAM

EDE5104ABSE (128M words × 4 bits)

EDE5108ABSE (64M words × 8 bits)

EDE5116ABSE (32M words × 16 bits)

Features

Description

The EDE5104ABSE is a 512M bits DDR2 SDRAM

• Power supply: VDD, VDDQ = 1.8V ± 0.1V

organized as 33,554,432 words × 4 bits × 4 banks.

• Double-data-rate architecture: two data transfers per

clock cycle

The EDE5108ABSE is a 512M bits DDR2 SDRAM

organized as 16,777,216 words × 8 bits × 4 banks.

• Bi-directional, differential data strobe (DQS and

/DQS) is transmitted/received with data, to be used in

capturing data at the receiver

They are packaged in 64-ball FBGA (µBGA^) package.

The EDE5116ABSE is a 512M bits DDR2 SDRAM

organized as 8,388,608 words × 16 bits × 4 banks.

• DQS is edge aligned with data for READs: center-

aligned with data for WRITEs

It is packaged in 84-ball FBGA (µBGA) package.

• Differential clock inputs (CK and /CK)

• DLL aligns DQ and DQS transitions with CK

transitions

• Commands entered on each positive CK edge: data

and data mask referenced to both edges of DQS

• Four internal banks for concurrent operation

• Data mask (DM) for write data

• Burst lengths: 4, 8

• /CAS Latency (CL): 3, 4, 5

• Auto precharge operation for each burst access

• Auto refresh and self refresh modes

• 7.8µs average periodic refresh interval

• SSTL_18 compatible I/O

• Posted CAS by programmable additive latency for

better command and data bus efficiency

• Off-Chip-Driver Impedance Adjustment and On-Die-

Termination for better signal quality

• Programmable RDQS, /RDQS output for making × 8

organization compatible to × 4 organization

• /DQS, (/RDQS) can be disabled for single-ended

Data Strobe operation.

• FBGA (µBGA) package with lead free solder

(Sn-Ag-Cu)

RoHS compliant

Document No. E0323E90 (Ver. 9.0)

Date Published September 2005 (K) Japan

Printed in Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2002-2005

12 3 4 5 6 7...66

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与EDE5116ABSE相关器件

型号	品牌	获取价格	描述	数据表
EDE5116ABSE-4A-E	ELPIDA	获取价格	512M bits DDR2 SDRAM
EDE5116ABSE-4C-E	ELPIDA	获取价格	DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84, FBGA-84
EDE5116ABSE-5A-E	ELPIDA	获取价格	暂无描述
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EDE5116AFSE-4A-E	ELPIDA	获取价格	512M bits DDR2 SDRAM (32M words x 16 bits)
EDE5116AFSE-5C-E	ELPIDA	获取价格	512M bits DDR2 SDRAM (32M words x 16 bits)
EDE5116AFSE-6E-E	ELPIDA	获取价格	512M bits DDR2 SDRAM (32M words x 16 bits)
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