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EDE2516AEBG-1J-E PDF预览

EDE2516AEBG-1J-E

更新时间: 2024-11-08 21:15:51
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
75页 579K
描述
DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84

EDE2516AEBG-1J-E 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:84
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.24风险等级:5.81
访问模式:FOUR BANK PAGE BURST最长访问时间:0.35 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PBGA-B84
JESD-609代码:e1长度:12.5 mm
内存密度:268435456 bit内存集成电路类型:DDR DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:84
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
认证状态:Not Qualified座面最大高度:1.2 mm
自我刷新:YES最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:8 mm
Base Number Matches:1

EDE2516AEBG-1J-E 数据手册

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PRELIMINARY DATA SHEET  
256M bits DDR2 SDRAM  
EDE2516AEBG-1J (16M words × 16 bits, 1066Mbps)  
Specifications  
Features  
Density: 256M bits  
Organization  
4M words × 16 bits × 4 banks  
Package  
84-ball FBGA  
Lead-free (RoHS compliant)  
Power supply: VDD, VDDQ = 1.8V 0.1V  
Data rate: 1066Mbps (max.)  
1KB page size  
Double-data-rate architecture; two data transfers per  
clock cycle  
The high-speed data transfer is realized by the 4 bits  
prefetch pipelined architecture  
Bi-directional differential data strobe (DQS and /DQS)  
is transmitted/received with data for capturing data at  
the receiver  
DQS is edge-aligned with data for READs; center-  
aligned with data for WRITEs  
Differential clock inputs (CK and /CK)  
DLL aligns DQ and DQS transitions with CK  
Row address: A0 to A12  
Column address: A0 to A8  
Four internal banks for concurrent operation  
Interface: SSTL_18  
Burst lengths (BL): 4, 8  
Burst type (BT):  
transitions  
Commands entered on each positive CK edge; data  
and data mask referenced to both edges of DQS  
Data mask (DM) for write data  
Posted /CAS by programmable additive latency for  
better command and data bus efficiency  
Sequential (4, 8)  
Interleave (4, 8)  
Off-Chip-Driver Impedance Adjustment and On-Die-  
Termination for better signal quality  
/CAS Latency (CL): 3, 4, 5, 6, 7  
Precharge: auto precharge option for each burst  
access  
/DQS can be disabled for single-ended Data Strobe  
operation  
Driver strength: normal/weak  
Refresh: auto-refresh, self-refresh  
Refresh cycles: 8192 cycles/64ms  
Average refresh period  
7.8μs at 0°C TC ≤ +85°C  
3.9μs at +85°C < TC ≤ +95°C  
Operating case temperature range  
TC = 0°C to +95°C  
Document No. E1330E10 (Ver. 1.0)  
Date Published April 2008 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
©Elpida Memory, Inc. 2008  

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