Datasheet > 存储 > DRAM> EDE2516ABSE-GE

EDE2516ABSE-GE

更新时间： 2024-09-17 22:27:55

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器双倍数据速率
页数	文件大小	规格书
66页	679K
描述
256M bits DDR2 SDRAM for HYPER DIMM

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中文翻译

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数据手册

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EDE2516ABSE-GE 数据手册

PRELIMINARY DATA SHEET

256M bits DDR2 SDRAM

for HYPER DIMM

EDE2508ABSE-GE (32M words × 8 bits)

EDE2516ABSE-GE (16M words × 16 bits)

Features

Description

The EDE2508ABSE is a 256M bits DDR2 SDRAM

• Power supply: VDD, VDDQ = 1.85V ± 0.1V

organized as 8,388,608 words × 8 bits × 4 banks.

It is packaged in 60-ball FBGA (µBGA^) package.

• Double-data-rate architecture: two data transfers per

clock cycle

• Bi-directional, differential data strobe (DQS and

/DQS) is transmitted/received with data, to be used in

capturing data at the receiver

The EDE2516ABSE is a 256M bits DDR2 SDRAM

organized as 4,194,304 words × 16 bits × 4 banks.

It is packaged in 84-ball FBGA (µBGA) package.

• DQS is edge aligned with data for READs: center-

aligned with data for WRITEs

• Differential clock inputs (CK and /CK)

• DLL aligns DQ and DQS transitions with CK

transitions

• Commands entered on each positive CK edge: data

and data mask referenced to both edges of DQS

• Four internal banks for concurrent operation

• Data mask (DM) for write data

• Burst lengths: 4, 8

• /CAS Latency (CL): 5

• Auto precharge operation for each burst access

• Auto refresh and self refresh modes

• Average refresh period

7.8µs at 0°C ≤ TC ≤ +85°C

3.9µs at +85°C < TC ≤ +95°C

• SSTL_18 compatible I/O

• Posted CAS by programmable additive latency for

better command and data bus efficiency

• Off-Chip-Driver Impedance Adjustment and On-Die-

Termination for better signal quality

• Programmable RDQS, /RDQS output for making × 8

organization compatible to × 4 organization

• /DQS, (/RDQS) can be disabled for single-ended

Data Strobe operation.

• FBGA (µBGA) package with lead free solder

(Sn-Ag-Cu)

Document No. E0657E20 (Ver. 2.0)

Date Published May 2005 (K) Japan

Printed in Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2005

12 3 4 5 6 7...66

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与EDE2516ABSE-GE相关器件

型号	品牌	获取价格	描述	数据表
EDE2516ABSE-GE-E	ELPIDA	获取价格	256M bits DDR2 SDRAM for HYPER DIMM
EDE2516ACBG-5C-E	ELPIDA	获取价格	DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
EDE2516ACBG-6C-E	ELPIDA	获取价格	DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
EDE2516ACBG-6E-E	ELPIDA	获取价格	DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
EDE2516ACBG-8E-E	ELPIDA	获取价格	DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
EDE2516ACSE-5C-E	ELPIDA	获取价格	256M bits DDR2 SDRAM
EDE2516ACSE-6E-E	ELPIDA	获取价格	256M bits DDR2 SDRAM
EDE2516ACSE-8E-E	ELPIDA	获取价格	256M bits DDR2 SDRAM
EDE2516AEBG	ELPIDA	获取价格	256M bits DDR2 SDRAM
EDE2516AEBG-1J-E	ELPIDA	获取价格	DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84