Datasheet > EDE1108AESE

EDE1108AESE

更新时间： 2024-09-18 06:55:55

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器双倍数据速率
页数	文件大小	规格书
78页	749K
描述
1G bits DDR2 SDRAM

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数据手册

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EDE1108AESE 数据手册

DATA SHEET

1G bits DDR2 SDRAM

EDE1108AESE (128M words × 8 bits)

EDE1116AESE (64M words × 16 bits)

Features

Specifications

• Density: 1G bits

• Double-data-rate architecture; two data transfers per

clock cycle

• Organization

• The high-speed data transfer is realized by the 4 bits

prefetch pipelined architecture

16M words × 8 bits × 8 banks (EDE1108AESE)

8M words × 16 bits × 8 banks (EDE1116AESE)

• Package

• Bi-directional differential data strobe (DQS and /DQS)

is transmitted/received with data for capturing data at

the receiver

60-ball FBGA (EDE1108AESE)

84-ball FBGA (EDE1116AESE)

• DQS is edge-aligned with data for READs; center-

aligned with data for WRITEs

Lead-free (RoHS compliant)

(EDE1108AESE-xx-E, EDE1116AESE-xx-E)

• Differential clock inputs (CK and /CK)

Lead-free (RoHS compliant) and Halogen-free

(EDE1108AESE-xx-F, EDE1116AESE-xx-F)

• DLL aligns DQ and DQS transitions with CK

transitions

• Power supply: VDD, VDDQ = 1.8V ± 0.1V

• Data rate

• Commands entered on each positive CK edge; data

and data mask referenced to both edges of DQS

• Data mask (DM) for write data

800Mbps/667Mbps (max.)

• 1KB page size (EDE1108AESE)

Row address: A0 to A13

Column address: A0 to A9

• 2KB page size (EDE1116AESE)

Row address: A0 to A12

Column address: A0 to A9

• Eight internal banks for concurrent operation

• Interface: SSTL_18

• Posted /CAS by programmable additive latency for

better command and data bus efficiency

• Off-Chip-Driver Impedance Adjustment and On-Die-

Termination for better signal quality

• Programmable RDQS, /RDQS output for making × 8

organization compatible to × 4 organization

• /DQS, (/RDQS) can be disabled for single-ended

Data Strobe operation

• Burst lengths (BL): 4, 8

• Burst type (BT):

Sequential (4, 8)

Interleave (4, 8)

• /CAS Latency (CL): 3, 4, 5, 6

• Precharge: auto precharge option for each burst

access

• Driver strength: normal/weak

• Refresh: auto-refresh, self-refresh

• Refresh cycles: 8192 cycles/64ms

Average refresh period

7.8µs at 0°C ≤ TC ≤ +85°C

3.9µs at +85°C < TC ≤ +95°C

• Operating case temperature range

TC = 0°C to +95°C

Document No. E1290E30 (Ver. 3.0)

Date Published January 2009 (K) Japan

Printed in Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2008-2009

12 3 4 5 6 7...78

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