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EDD2516AKTA

更新时间: 2024-11-07 06:55:55
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器双倍数据速率
页数 文件大小 规格书
49页 502K
描述
256M bits DDR SDRAM

EDD2516AKTA 数据手册

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PRELIMINARY DATA SHEET  
256M bits DDR SDRAM  
EDD2516AKTA (16M words × 16 bits)  
Description  
Pin Configurations  
The EDD2516AKTA is a 256M bits Double Data Rate  
(DDR) SDRAM organized as 4,194,304 words × 16 bits  
× 4 banks. Read and write operations are performed at  
the cross points of the CK and the /CK. This high-  
speed data transfer is realized by the 2 bits prefetch-  
pipelined architecture. Data strobe (DQS) both for  
read and write are available for high speed and reliable  
data bus design. By setting extended mode register,  
the on-chip Delay Locked Loop (DLL) can be set  
enable or disable. It is packaged in 66-pin plastic  
TSOP (II).  
/xxx indicates active low signal.  
66-pin Plastic TSOP(II)  
VDD  
DQ0  
VDDQ  
DQ1  
DQ2  
VSSQ  
DQ3  
DQ4  
VDDQ  
DQ5  
DQ6  
VSSQ  
DQ7  
NC  
VDDQ  
LDQS  
NC  
VDD  
NC  
LDM  
/WE  
/CAS  
/RAS  
/CS  
66  
65  
64  
63  
62  
61  
60  
59  
58  
57  
56  
55  
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
VSS  
1
2
3
4
5
6
7
8
DQ15  
VSSQ  
DQ14  
DQ13  
VDDQ  
DQ12  
DQ11  
VSSQ  
DQ10  
DQ9  
VDDQ  
DQ8  
NC  
VSSQ  
UDQS  
NC  
VREF  
VSS  
UDM  
/CK  
CK  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
Features  
Power supply : VDDQ = 2.5V ± 0.2V  
: VDD = 2.5V ± 0.2V  
Data rate: 333Mbps/266Mbps (max.)  
Double Data Rate architecture; two data transfers per  
clock cycle  
Bi-directional, data strobe (DQS) is transmitted  
/received with data, to be used in capturing data at  
the receiver  
CKE  
NC  
A12  
A11  
A9  
NC  
BA0  
BA1  
Data inputs, outputs, and DM are synchronized with  
DQS  
4 internal banks for concurrent operation  
DQS is edge aligned with data for READs; center  
aligned with data for WRITEs  
A10(AP) 28  
A0 29  
39 A8  
38 A7  
37 A6  
36 A5  
35 A4  
34 VSS  
A1 30  
A2 31  
A3 32  
VDD 33  
Differential clock inputs (CK and /CK)  
DLL aligns DQ and DQS transitions with CK  
transitions  
(Top view)  
Commands entered on each positive CK edge; data  
and data mask referenced to both edges of DQS  
A0 to A12  
BA0, BA1  
Address input  
Bank select address  
Data mask (DM) for write data  
Auto precharge option for each burst access  
SSTL_2 compatible I/O  
Programmable burst length (BL): 2, 4, 8  
Programmable /CAS latency (CL): 2, 2.5  
Programmable output driver strength: normal/weak  
Refresh cycles: 8192 refresh cycles/64ms  
7.8μs maximum average periodic refresh interval  
2 variations of refresh  
DQ0 to DQ15 Data-input/output  
UDQS/LDQS Input and output data strobe  
/CS  
/RAS  
/CAS  
/WE  
UDM/LDM  
CK  
Chip select  
Row address strobe command  
Column address strobe command  
Write enable  
Input mask  
Clock input  
/CK  
CKE  
Differential clock input  
Clock enable  
VREF  
VDD  
VSS  
VDDQ  
VSSQ  
NC  
Input reference voltage  
Power for internal circuit  
Ground for internal circuit  
Power for DQ circuit  
Ground for DQ circuit  
No connection  
Auto refresh  
Self refresh  
Document No. E0303E40 (Ver. 4.0)  
This product became EOL in March, 2007.  
Date Published February 2005 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
©Elpida Memory, Inc. 2002-2005  

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