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EDD2504AKTA-7B PDF预览

EDD2504AKTA-7B

更新时间: 2024-09-16 22:30:39
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器双倍数据速率
页数 文件大小 规格书
49页 434K
描述
256M bits DDR SDRAM (64M words x 4 bits)

EDD2504AKTA-7B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSSOP66,.46
针数:66Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.24
风险等级:5.5访问模式:FOUR BANK PAGE BURST
最长访问时间:0.75 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
交错的突发长度:2,4,8JESD-30 代码:R-PDSO-G66
JESD-609代码:e0长度:22.22 mm
内存密度:268435456 bit内存集成电路类型:DDR DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:66
字数:67108864 words字数代码:64000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64MX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSSOP66,.46
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):235电源:2.5 V
认证状态:Not Qualified刷新周期:8192
座面最大高度:1.2 mm自我刷新:YES
连续突发长度:2,4,8子类别:DRAMs
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

EDD2504AKTA-7B 数据手册

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DATA SHEET  
256M bits DDR SDRAM  
EDD2504AKTA (64M words × 4 bits)  
Description  
Pin Configurations  
The EDD2504AK is a 256M bits Double Data Rate  
(DDR) SDRAM organized as 16,777,216 words × 4 bits  
× 4 banks. Read and write operations are performed at  
the cross points of the CK and the /CK. This high-  
speed data transfer is realized by the 2 bits prefetch-  
pipelined architecture. Data strobe (DQS) both for  
read and write are available for high speed and reliable  
data bus design. By setting extended mode register,  
the on-chip Delay Locked Loop (DLL) can be set  
enable or disable. It is packaged in 66-pin plastic  
TSOP (II).  
/xxx indicates active low signal.  
66-pin Plastic TSOP(II)  
VDD  
NC  
VSS  
NC  
VSSQ  
NC  
DQ3  
VDDQ  
NC  
1
2
66  
65  
64  
63  
62  
61  
60  
59  
VDDQ  
NC  
3
4
DQ0  
VSSQ  
NC  
5
6
7
NC  
NC  
8
VDDQ  
NC  
DQ1  
VSSQ  
NC  
NC  
VDDQ  
NC  
9
58 VSSQ  
NC  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
57  
56  
55  
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
DQ2  
VDDQ  
NC  
Features  
NC  
Power supply : VDDQ = 2.5V ± 0.2V  
: VDD = 2.5V ± 0.2V  
Data rate: 333Mbps/266Mbps (max.)  
VSSQ  
DQS  
NC  
VREF  
VSS  
DM  
/CK  
CK  
CKE  
NC  
A12  
A11  
A9  
A8  
A7  
NC  
VDD  
NC  
Double Data Rate architecture; two data transfers per  
clock cycle  
NC  
/WE  
/CAS  
/RAS  
/CS  
Bi-directional, data strobe (DQS) is transmitted  
/received with data, to be used in capturing data at  
the receiver  
Data inputs, outputs, and DM are synchronized with  
NC  
BA0  
BA1  
A10(AP)  
A0  
DQS  
4 internal banks for concurrent operation  
DQS is edge aligned with data for READs; center  
A1  
A2  
A3  
VDD  
A6  
A5  
A4  
VSS  
aligned with data for WRITEs  
Differential clock inputs (CK and /CK)  
DLL aligns DQ and DQS transitions with CK  
transitions  
(Top view)  
Commands entered on each positive CK edge; data  
and data mask referenced to both edges of DQS  
Data mask (DM) for write data  
Auto precharge option for each burst access  
SSTL_2 compatible I/O  
Programmable burst length (BL): 2, 4, 8  
Programmable /CAS latency (CL): 2, 2.5  
Programmable output driver strength: normal/weak  
Refresh cycles: 8192 refresh cycles/64ms  
7.8µs maximum average periodic refresh interval  
2 variations of refresh  
A0 to A12  
BA0, BA1  
DQ0 to DQ3  
DQS  
Address input  
Bank select address  
Data-input/output  
Input and output data strobe  
Chip select  
Row address strobe command  
Column address strobe command  
Write enable  
Input mask  
Clock input  
Differential clock input  
Clock enable  
Input reference voltage  
Power for internal circuit  
Ground for internal circuit  
Power for DQ circuit  
Ground for DQ circuit  
No connection  
/CS  
/RAS  
/CAS  
/WE  
DM  
CK  
/CK  
CKE  
VREF  
VDD  
VSS  
Auto refresh  
Self refresh  
VDDQ  
VSSQ  
NC  
Document No. E0457E10 (Ver. 1.0)  
Date Published January 2004 (K) Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2004  

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