Datasheet > EDD12322GBH-TS

EDD12322GBH-TS

更新时间： 2024-09-17 06:55:55

品牌	Logo	应用领域
尔必达 - ELPIDA		双倍数据速率
页数	文件大小	规格书
57页	708K
描述
128M bits DDR Mobile RAM™ WTR (Wide Temperature Range)

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中文翻译

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数据手册

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EDD12322GBH-TS 数据手册

PRELIMINARY DATA SHEET

128M bits DDR Mobile RAM

WTR (Wide Temperature Range)

EDD12322GBH-TS (4M words × 32 bits)

Features

Specifications

• Density: 128M bits

• Organization

• DLL is not implemented

• Low power consumption

× 32 bits: 1M words × 32 bits × 4 banks

• Package: 90-ball FBGA

Lead-free (RoHS compliant) and Halogen-free

• Power supply: VDD, VDDQ = 1.7V to 1.95V

• Data rate: 333Mbps/266Mbps (max.)

• 1KB page size

• Double-data-rate architecture; two data transfers per

one clock cycle

• The high-speed data transfer is realized by the 2 bits

prefetch pipelined architecture

• Bi-directional data strobe (DQS) is transmitted

/received with data for capturing data at the receiver.

• Data inputs, outputs, and DM are synchronized with

Row address: A0 to A11

DQS

Column address: A0 to A7

• Four internal banks for concurrent operation

• Interface: LVCMOS

• DQS is edge-aligned with data for READs; center-

aligned with data for WRITEs

• Differential clock inputs (CK and /CK)

• Commands entered on each positive CK edge: data

• Burst lengths (BL): 2, 4, 8, 16

• Burst type (BT):

Sequential (2, 4, 8, 16)

Interleave (2, 4, 8, 16)

• /CAS Latency (CL): 3

and data mask referenced to both edges of DQS

• Data mask (DM) for write data

• Burst termination by burst stop command and

Precharge command

• Wide temperature range

TA = −25°C to +85°C

• Precharge: auto precharge option for each burst

access

• Driver strength: normal, 1/2, 1/4, 1/8

• Refresh: auto-refresh, self-refresh

• Refresh cycles: 4096 cycles/64ms

Average refresh period: 15.6µs

• Operating ambient temperature range

TA = −25°C to +85°C

Document No. E1530E20 (Ver. 2.0)

Date Published October 2009 (K) Japan

Printed in Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2009

12 3 4 5 6 7...57

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