DATA SHEET
128M bits DDR SDRAM
EDD1216AATA (8M words × 16 bits)
Description
Pin Configurations
The EDD1216AATA is a 128M bits Double Data Rate
(DDR) SDRAM organized as 2,097,154 words × 16 bits
× 4 banks. Read and write operations are performed at
the cross points of the CK and the /CK. This high-
speed data transfer is realized by the 2 bits prefetch-
pipelined architecture. Data strobe (DQS) both for
read and write are available for high speed and reliable
data bus design. By setting extended mode register,
the on-chip Delay Locked Loop (DLL) can be set
enable or disable. It is packaged in 66-pin plastic
TSOP (II).
/xxx indicates active low signal.
66-pin Plastic TSOP(II)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VSS
1
2
3
4
5
6
7
8
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSSQ
UDQS
NC
VREF
VSS
9
10
11
12
13
14
15
16
17
18
19
20
21
Features
• Power supply : VDD ,VDDQ = 2.5V ± 0.2V
• Data rate: 333Mbps/266Mbps (max.)
VDDQ
LDQS
NC
VDD
NC
• Double Data Rate architecture; two data transfers per
clock cycle
• Bi-directional, data strobe (DQS) is transmitted
/received with data, to be used in capturing data at
the receiver
LDM
/WE
UDM
/CK
45 CK
/CAS 22
/RAS
/CS
NC
BA0
BA1
A10(AP)
A0
CKE
23
24
25
26
27
28
29
30
31
32
33
44
43
42
41
40
39
38
37
36
35
34
• Data inputs, outputs, and DM are synchronized with
NC
NC
A11
A9
A8
A7
A6
A5
A4
VSS
DQS
• 4 internal banks for concurrent operation
• DQS is edge aligned with data for READs; center
aligned with data for WRITEs
A1
A2
A3
VDD
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
(Top view)
and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Auto precharge option for each burst access
• SSTL_2 compatible I/O
A0 to A11
BA0, BA1
Address input
Bank select address
DQ0 to DQ15 Data-input/output
UDQS/LDQS Input and output data strobe
• Programmable burst length (BL): 2, 4, 8
• Programmable /CAS latency (CL): 2, 2.5
• Programmable output driver strength: normal/weak
• Refresh cycles: 4096 refresh cycles/64ms
15.6µs maximum average periodic refresh interval
• 2 variations of refresh
Auto refresh
Self refresh
• TSOP (II) package with lead free solder (Sn-Bi)
RoHS compliant
/CS
Chip select
/RAS
/CAS
/WE
UDM/LDM
CK
Row address strobe command
Column address strobe command
Write enable
Input mask
Clock input
/CK
CKE
Differential clock input
Clock enable
VREF
VDD
VSS
VDDQ
VSSQ
NC
Input reference voltage
Power for internal circuit
Ground for internal circuit
Power for DQ circuit
Ground for DQ circuit
No connection
Document No. E0444E40 (Ver. 4.0)
Date Published October 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2003-2005