Datasheet > EDBA164B2PR

EDBA164B2PR

更新时间： 2024-11-12 02:46:55

品牌	Logo	应用领域
镁光 - MICRON		动态存储器双倍数据速率光电二极管
页数	文件大小	规格书
152页	2119K
描述
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features

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EDBA164B2PR 数据手册

216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM

Features

LPDDR2 SDRAM

EDB8164B4PR, EDB8164B4PK, EDB8164B4PT, EDBA164B2PR

Options

Marking

Features

• Ultra-low-voltage core and I/O power supplies

• Frequency range

– 533 MHz (data rate: 1066 Mb/s/pin)

• 4n prefetch DDR architecture

• 8 internal banks for concurrent operation

• Multiplexed, double data rate, command/address

inputs; commands entered on each CK_t/CK_c

edge

• Bidirectional/differential data strobe per byte of

data (DQS_t/DQS_c)

• Programmable READ and WRITE latencies (RL/WL)

• Burst length: 4, 8, and 16

• Per-bank refresh for concurrent operation

• Auto temperature-compensated self refresh

(ATCSR) by built-in temperature sensor

• Partial-array self refresh (PASR)

• Deep power-down mode (DPD)

• Selectable output drive strength (DS)

• Clock-stop capability

• Density/Page Size

– 8Gb/2-CS – dual die

– 16Gb/4-CS – quad die

• Organization

– x64

• V_DD1/V_DD2/V_DDQ: 1.8V/1.2V/1.2V

• Revision

– Dual die

– Quad die

• FBGA “green” package

– 12mm x 12mm x 0.8mm, 216-ball

PoP FBGA package, dual die

– 12mm x 12mm x 0.8mm, 216-ball

PoP FBGA package, dual die

– 12mm x 12mm x 1.0mm, 216-ball

PoP FBGA package, quad die

– 14mm x 14mm x 0.7mm, 220-ball

PoP FBGA package, dual die

• Timing – cycle time

– 1.875ns @ RL = 8

-1D

• Lead-free (RoHS-compliant) and halogen-free

packaging

• Special options

– Non-Automotive

blank

• Operating temperature range

– From –30°C to +85°C

– From –40°C to +85°C

– From –40°C to +105°C

blank

Table 1: Key Timing Parameters

Speed

Grade

Clock Rate Data Rate

(MHz)

(Mb/s/pin)

533

1066

Table 2: S4 Configuration Addressing

Architecture

128 Meg x 64

256 Meg x 64

Die configuration

Row addressing

Column addressing

Number of die

Die per rank

16 Meg x 32 x 8 banks x 2 channel

32 Meg x 32 x 8 banks x 2 channel

16K A[13:0]

1K A[9:0]

Ranks per channel

1. A channel is a complete LPDRAM interface, including command/address and data pins.

Note:

09005aef85eb530a

216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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与EDBA164B2PR相关器件

型号	品牌	获取价格	描述	数据表
EDBA164B2PR-1D-F-D	MICRON	获取价格	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
EDBA164B4PK-1DATF-D	MICRON	获取价格	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
EDBA164B4PK-1DATF-R	MICRON	获取价格	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
EDBA164B4PK-1DITF-D	MICRON	获取价格	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
EDBA164B4PK-1DITF-R	MICRON	获取价格	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
EDBA164B4PR-1DATF-D	MICRON	获取价格	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
EDBA164B4PR-1DATF-R	MICRON	获取价格	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
EDBA164B4PR-1DITF-D	MICRON	获取价格	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
EDBA164B4PR-1DITF-R	MICRON	获取价格	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
EDBA164B4PT-1DATF-D	MICRON	获取价格	216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features

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