5秒后页面跳转
ECJ-2VB2A104K PDF预览

ECJ-2VB2A104K

更新时间: 2024-11-06 12:50:55
品牌 Logo 应用领域
威讯 - RFMD 放大器脉冲功率放大器
页数 文件大小 规格书
10页 871K
描述
280W GaN Wideband Pulsed Power Amplifier

ECJ-2VB2A104K 数据手册

 浏览型号ECJ-2VB2A104K的Datasheet PDF文件第2页浏览型号ECJ-2VB2A104K的Datasheet PDF文件第3页浏览型号ECJ-2VB2A104K的Datasheet PDF文件第4页浏览型号ECJ-2VB2A104K的Datasheet PDF文件第5页浏览型号ECJ-2VB2A104K的Datasheet PDF文件第6页浏览型号ECJ-2VB2A104K的Datasheet PDF文件第7页 
RFHA1025  
280W GaN  
Wideband  
Pulsed Power  
Amplifier  
RFHA1025  
280W GaN Wideband Pulsed Power Amplifier  
Package: Flanged Ceramic, 2-Pin  
Features  
Wideband Operation: 0.96GHz to  
1.215GHz  
RF IN  
VG  
Pin 1 (CUT)  
RF OUT  
VD  
Pin 2  
Advanced GaN HEMT Technology  
Advanced Heat-Sink Technology  
Supports Multiple Pulse  
GND  
BASE  
Conditions  
10% to 20% Duty Cycle  
100s to 1ms Pulse Width  
Integrated Matching  
Components for High Terminal  
Impedances  
Functional Block Diagram  
50V Operation Typical  
Performance  
Product Description  
Output Pulsed Power 280W  
The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band  
pulsed radar, air traffic control and surveillance and general purpose broadband  
amplifier applications. Using an advanced high power density gallium nitride (GaN)  
semiconductor process, these high performance amplifiers achieve high output  
power, high efficiency and flat gain over a broad frequency range in a single pack-  
age. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged  
ceramic package. The package provides excellent thermal stability through the use  
of advanced heat sink and power dissipation technologies. Ease of integration is  
accomplished through the incorporation of single, optimized matching networks  
that provide wideband gain and power performance in a single amplifier.  
Pulse Width 100S,  
Duty Cycle 10%  
Small Signal Gain 17dB  
High Efficiency 55%  
-40°C to 85°C Operating  
Temperature  
Applications  
Radar  
Air Traffic Control and  
Surveillance  
General Purpose Broadband  
Amplifiers  
Ordering Information  
RFHA1025S2  
RFHA1025SB  
RFHA1025SQ  
RFHA1025SR  
RFHA1025TR13  
2-Piece sample bag  
5-Piece bag  
25-Piece bag  
50 Pieces on 7” short reel  
250 Pieces on 13” reel  
RFHA1025PCBA-410 Fully assembled evaluation board 0.96GHz to .215GHz;50V  
Optimum Technology Matching® Applied  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
Si BJT  
GaN HEMT  
BiFET HBT  
SOI  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.  
DS120928  
1 of 10  

与ECJ-2VB2A104K相关器件

型号 品牌 获取价格 描述 数据表
ECJ2VB2A152 PANASONIC

获取价格

Multilayer Ceramic Capacitors
ECJ2VB2A152K PANASONIC

获取价格

Multilayer Ceramic Capacitors(100V, 200V Series)
ECJ2VB2A152M PANASONIC

获取价格

Multilayer Ceramic Capacitors(100V, 200V Series)
ECJ2VB2A221 PANASONIC

获取价格

Multilayer Ceramic Capacitors
ECJ2VB2A221K PANASONIC

获取价格

CAP 220PF 100V 10% X7R SMD-0805 TR-7-PA
ECJ2VB2A221M PANASONIC

获取价格

Multilayer Ceramic Capacitors(100V, 200V Series)
ECJ2VB2A222 PANASONIC

获取价格

Multilayer Ceramic Capacitors
ECJ2VB2A222K PANASONIC

获取价格

Multilayer Ceramic Capacitors(100V, 200V Series)
ECJ2VB2A222M PANASONIC

获取价格

Multilayer Ceramic Capacitors(100V, 200V Series)
ECJ2VB2A331 PANASONIC

获取价格

Multilayer Ceramic Capacitors