Datasheet > ECJ-2VB2A104K

ECJ-2VB2A104K

更新时间： 2024-11-09 12:50:55

品牌	Logo	应用领域
威讯 - RFMD		放大器脉冲功率放大器
页数	文件大小	规格书
10页	871K
描述
280W GaN Wideband Pulsed Power Amplifier

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ECJ-2VB2A104K 数据手册

RFHA1025

280W GaN

Wideband

Pulsed Power

Amplifier

RFHA1025

280W GaN Wideband Pulsed Power Amplifier

Package: Flanged Ceramic, 2-Pin

Features

 Wideband Operation: 0.96GHz to

1.215GHz

RF IN

Pin 1 (CUT)

RF OUT

Pin 2

 Advanced GaN HEMT Technology

 Advanced Heat-Sink Technology

 Supports Multiple Pulse

GND

BASE

Conditions

 10% to 20% Duty Cycle

 100s to 1ms Pulse Width

 Integrated Matching

Components for High Terminal

Impedances

Functional Block Diagram

 50V Operation Typical

Performance

Product Description

 Output Pulsed Power 280W

The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band

pulsed radar, air traffic control and surveillance and general purpose broadband

amplifier applications. Using an advanced high power density gallium nitride (GaN)

semiconductor process, these high performance amplifiers achieve high output

power, high efficiency and flat gain over a broad frequency range in a single pack-

age. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged

ceramic package. The package provides excellent thermal stability through the use

of advanced heat sink and power dissipation technologies. Ease of integration is

accomplished through the incorporation of single, optimized matching networks

that provide wideband gain and power performance in a single amplifier.

 Pulse Width 100S,

Duty Cycle 10%

 Small Signal Gain 17dB

 High Efficiency 55%

 -40°C to 85°C Operating

Temperature

Applications

 Radar

 Air Traffic Control and

Surveillance

 General Purpose Broadband

Amplifiers

Ordering Information

RFHA1025S2

RFHA1025SB

RFHA1025SQ

RFHA1025SR

RFHA1025TR13

2-Piece sample bag

5-Piece bag

25-Piece bag

50 Pieces on 7” short reel

250 Pieces on 13” reel

RFHA1025PCBA-410 Fully assembled evaluation board 0.96GHz to .215GHz;50V

Optimum Technology Matching^®Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

BiFET HBT

SOI



RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

DS120928

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