The Communications Edge
TM ECG050
InGaP HBT Gain Block
Product Information
Product Features
xꢀ DC – 4 GHz
Product Description
The ECG050 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 1000 MHz, the ECG050 typically provides 19
dB of gain, +34 dBm Output IP3, and +19 dBm P1dB.
Functional Diagram
GND
4
xꢀ +19 dBm P1dB at 1 GHz
xꢀ +34 dBm OIP3 at 1 GHz
xꢀ 19 dB Gain at 1 GHz
xꢀ 5.5 dB Noise Figure at 2 GHz
The ECG050 consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation. The device is
ideal for wireless applications and is available in low-cost,
surface-mountable plastic SOT-86 and SOT-89 packages.
The ECG050 is also available in a lead-free/green/RoHS-
compliant SOT-89 package. All devices are 100% RF and
DC tested.
1
2
3
xꢀ Available in SOT-86, SOT-
89 and lead-free / green SOT-
89 Package Styles
RF IN
GND
RF OUT
ECG050B / ECG050B-G
GND
4
xꢀ Internally matched to 50 :
Applications
xꢀ Mobile Infrastructure
xꢀ CATV / DBS
xꢀ W-LAN / ISM
1
3
RF Out
RF In
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the ECG050 will work for other various applications within
the DC to 4 GHz frequency range such as CATV and fixed
wireless.
2
GND
ECG050C
xꢀ RFID
xꢀ Defense / Homeland Security
xꢀ Fixed Wireless
Specifications (1)
Typical Performance (3)
Parameter
Operational Bandwidth
Test Frequency
Gain
Output P1dB
Output IP3 (2)
Test Frequency
Gain
Units Min Typ Max
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
Typical
MHz
MHz
dB
DC
4000
500
20
900
19.2
-18
-15
+19
+34
4
1900
2140
17
-19
-15
16
-20
-15
1000
19
-17
-15
+18
+33
3.5
dBm
dBm
MHz
dB
+19
+34
2000
17
+18.5 +18.2
+31
5.4
+30.5
3.8
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
Device Voltage
Device Current
dB
dB
dBm
dBm
dB
19
15
+18.5
+31
5.4
3. Test conditions: T = 25º C, Supply Voltage = +6 V, Device Voltage = +5.0V, Rbias = 14 , 50 System.
V
mA
4.2
5.0
5.2
70
1. Test conditions unless otherwise noted: 25º C, Supply Voltage = +6 V, Rbias = 14 , 50 System.
2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Ordering Information
Absolute Maximum Rating
Part No.
ECG050B
Description
InGaP HBT Gain Block
Parameter
Rating
(leaded SOT-89 Pkg)
InGaP HBT Gain Block
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Current
-40 to +85 qC
-65 to +150 qC
+12 dBm
ECG050B-G
(lead-free/green/RoHS-compliant SOT-89 Pkg)
ECG050C
InGaP HBT Gain Block (SOT-86 Pkg)
700 –2400 MHz Fully Assembled Eval. Board
700 –2400 MHz Fully Assembled Eval. Board
ECG050B-PCB
ECG050C-PCB
150 mA
Junction Temperature
+250 qC
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
December 2004
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
Web site: www.wj.com
5秒后页面跳转
SK海力士量产12层HBM3E，容量高达36GB
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
贸泽上架Tallysman TW5386智能GNSS天线
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
