Datasheet > ECE-V1HA101UP

ECE-V1HA101UP

更新时间： 2024-11-26 12:23:11

品牌	Logo	应用领域
威讯 - RFMD		放大器功率放大器
页数	文件大小	规格书
14页	1658K
描述
120W GaN WIDEBAND POWER AMPLIFIER

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ECE-V1HA101UP 数据手册

RF3934

120W GaN WIDEBAND POWER AMPLIFIER

Package: Hermetic 2-Pin Flanged Ceramic

Features

RF IN

Pin 1 (CUT)

RF OUT

Pin 2



Broadband Operation DC to

3.5GHz

Advanced GaN HEMT

Technology

Advanced Heat-Sink

Technology

GND

BASE

Small Signal Gain = 13dB at

2GHz

48V Operation Typical

Performance

• Output Power 140W at P3dB

• Drain Efficiency 60% at P3dB

• -40°C to 85°C Operation

Functional Block Diagram

Product Description

The RF3934 is a 48V 120W high power discrete amplifier designed for commercial

wireless infrastructure, cellular and WiMAX infrastructure, industrial/scien-

tific/medical and general purpose broadband amplifier applications. Using an

advanced high power density Gallium Nitride (GaN) semiconductor process, these

high-performance amplifiers achieve high efficiency and flat gain over a broad fre-

quency range in a single amplifier design. The RF3934 is an unmatched GaN tran-

sistor packaged in a hermetic, flanged ceramic package. This package provides

excellent thermal stability through the use of advanced heat sink and power dissi-

pation technologies. Ease of integration is accomplished through the incorporation

of simple, optimized matching networks external to the package that provide wide-

band gain and power performance in a single amplifier.

Applications



Commercial Wireless

Infrastructure



Cellular and WiMAX

Infrastructure



Civilian and Military Radar

General Purpose Broadband

Amplifiers



Public Mobile Radios

Industrial, Scientific, and

Medical

Ordering Information

RF3934S2

2-piece sample bag

RF3934SB

5-piece bag

RF3934SQ

RF3934SR

RF3934TR7

RF3934PCK-411

25-piece bag

100 pieces on 7” short reel

750 pieces on 7” reel

Fully assembled evaluation board optimized for

2.14GHz; 48V

Optimum Technology Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

BiFET HBT

LDMOS



RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

DS120306

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