Datasheet > ECA-2AM100

ECA-2AM100

更新时间： 2024-02-08 12:07:09

品牌	Logo	应用领域
威讯 - RFMD		放大器脉冲功率放大器
页数	文件大小	规格书
10页	745K
描述
280W GaN WIDE-BAND PULSED POWER AMPLIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ECA-2AM100 数据手册

RFHA1020

280W GaN WIDE-BAND PULSED

POWER AMPLIFIER

Package: Flanged Ceramic, 2 Pin

Features

RF IN

Pin 1 (CUT)

RF OUT



Wideband Operation: 1.2GHz

to 1.4GHz

Pin 2

Advanced GaN HEMT

Technology

GND

BASE

Advanced Heat-Sink

Technology

 Supports Multiple Pulse

Conditions

 10% to 20% Duty Cycle

 100s to 1ms Pulse Width



Integrated Matching

Components for High

Terminal Impedances

Functional Block Diagram

50V Operation Typical

Performance:

 Output Pulsed Power: 280W

 Pulse Width: 100s, Duty Cycle

10%

 Small Signal Gain: 15dB

 High Efficiency (55%)

 - 40°C to 85°C Operating

Temperature

Product Description

The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band

pulsed radar, air traffic control and surveillance and general purpose broadband

amplifier applications. Using an advanced high power density Gallium Nitride (GaN)

semiconductor process, these high performance amplifiers achieve high output

power, high efficiency, and flat gain over a broad frequency range in a single pack-

age. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged

ceramic package. The package provides excellent thermal stability through the use

of advanced heat sink and power dissipation technologies. Ease of integration is

accomplished through the incorporation of single, optimized matching networks

that provide wideband gain and power performance in a single amplifier.

Applications



Radar



Air Traffic Control and

Surveillance

Ordering Information



General Purpose Broadband

Amplifiers

RFHA1020S2

RFHA1020SB

RFHA1020SQ

RFHA1020SR

RFHA1020TR13

2-Piece sample bag

5-Piece bag

25-Piece bag

50 Pieces on 7” short reel

250 Pieces on 13” reel

RFHA1020PCBA-410 Fully assembled evaluation board 1.2GHz to 1.4GHz; 50V

operation

Optimum Technology Matching^®Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

BiFET HBT



RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

DS120508

1 of 10

12 3 4 5 6 7...10

中文翻译

下载PDF

与ECA-2AM100相关器件

型号	品牌	获取价格	描述	数据表
ECA2AM100(B)	PANASONIC	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 100V, 20% +Tol, 20% -Tol, 10uF
ECA2AM100(I)	PANASONIC	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 100V, 20% +Tol, 20% -Tol, 10uF
ECA2AM100B	PANASONIC	获取价格	M-A
ECA2AM100E	PANASONIC	获取价格	M-A
ECA2AM100I	PANASONIC	获取价格	M-A
ECA2AM101	PANASONIC	获取价格	Radial Lead Type
ECA-2AM101	PANASONIC	获取价格	Aluminum Electrolytic Capacitors
ECA2AM101B	PANASONIC	获取价格	M-A
ECA2AM101E	PANASONIC	获取价格	M-A
ECA2AM102	PANASONIC	获取价格	Radial Lead Type

与ECA-2AM100相关文章

一文带你了解DS28E40主要特征、安全特性、应用场景
2024-07-30

41
RT9172资料手册解读：关节特性、引脚信息、参数说明
2024-07-30

38
一文带你了解SM8760CA资料：主要参数特征
2024-07-30

39
解读MAX3238ECPW：一款多通道RS-232线驱动/接收器
2024-07-30

46

产品中心

服务支持

精选活动

关于我们

帮助中心

ECA-2AM100

ECA-2AM100 数据手册

与ECA-2AM100相关器件

与ECA-2AM100相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ECA-2AM100

ECA-2AM100 数据手册

与ECA-2AM100相关器件

与ECA-2AM100相关文章

您还可以找

您在本页遇到什么问题？