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EC4304C

更新时间： 2024-02-22 01:48:46
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 39K
描述
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,250MA I(D),LLCC

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EC4304C 技术参数

生命周期：Transferred零件包装代码：DFN
包装说明：SMALL OUTLINE, R-PDSO-N4针数：4
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.4
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：0.25 A最大漏极电流 (ID)：0.25 A
最大漏源导通电阻：1.9 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-N4元件数量：1
端子数量：4工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：0.15 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：NO LEAD
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

EC4304C 数据手册

 浏览型号EC4304C的Datasheet PDF文件第2页浏览型号EC4304C的Datasheet PDF文件第3页浏览型号EC4304C的Datasheet PDF文件第4页 
Ordering number : ENN8124  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
EC4304C  
Features  
• Low ON-resistance.  
• High-speed switching.  
• 2.5V drive.  
• High resistance to damage from ESD (typ 300V) [with a protection diode connected between the gate and source].  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage(*1)  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
--30  
--10  
DSS  
V
GSS  
I
D
--0.25  
--1  
A
Drain Current (Pulse)  
I
PW≤10µs, duty cycle≤1%  
A
DP  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
P
0.15  
150  
W
°C  
°C  
D
Tch  
Tstg  
--55 to +150  
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.  
Electrical Characteristics at Ta=25°C  
Ratings  
Unit  
Parameter  
Symbol  
Conditions  
= --1mA, V =0  
min  
--30  
typ  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
V
µA  
µA  
V
(BR)DSS  
D
GS  
I
V
V
V
V
= --30V, V =0  
GS  
--1  
--1  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
= --8V, V =0  
DS  
V
(off)  
GS  
= --10V, I = --100µA  
--0.4  
0.24  
--1.4  
D
Forward Transfer Admittance  
yfs  
= --10V, I = --120mA  
0.4  
1.5  
2.0  
4.0  
40  
S
D
R
(on)1  
I
I
I
= --120mA, V = --4V  
GS  
1.9  
2.8  
8.0  
Ω
DS  
DS  
DS  
D
D
D
Static Drain-to-Source On-State Resistance  
R
R
(on)2  
(on)3  
= --60mA, V = --2.5V  
GS  
Ω
= --10mA, V = --1.5V  
GS  
Ω
Input Capacitance  
Ciss  
V
V
V
= --10V, f=1MHz  
DS  
= --10V, f=1MHz  
DS  
= --10V, f=1MHz  
DS  
pF  
pF  
pF  
Output Capacitance  
Coss  
Crss  
8
Reverse Transfer Capacitance  
4.5  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
21805PE TS IM TB-00000116  
No.8124-1/4  
1234

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