EC30LA02

更新时间： 2024-10-25 23:13:19

品牌	Logo	应用领域
NIEC		整流二极管肖特基二极管
页数	文件大小	规格书
6页	61K
描述
Schottky Barrier Diode

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中文翻译

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EC30LA02 数据手册

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T y p e : EC30LA02

OUTLINE DRAWING

FEATURES

* Miniature Size,Surface Mount Device

* Extremely Low Forward Voltage Drop

* Low Power Loss,High Efficiency

* High Surge Capability

* Packaged in 12mm Tape and Reel

* Not Rolling During Assembly

Maximum Ratings

Approx Net Weight:0.06g

EC30LA02

Rating

Symbol

Unit

Repetitive Peak Reverse Voltage

Repetitive Peak Surge Reverse Voltage

V_RRM

V_RRSM

25(pulse width ≤ 1µs duty ≤ 1/50)

2.1

Ta=25°C *1

Tl=85°C Tl=Lead

Temperature

4.71

50Hz Half Sine

Wave Resistive

Load

Average Rectified Output Current

I_o

3.0

RMS Forward Current

Surge Forward Current

I_F(RMS)

I_FSM

50Hz Half Sine Wave,1cycle

Non-repetitive

Operating JunctionTemperature Range

Storage Temperature Range

T_jw

T_stg

-40 to +125

°C

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Min. Typ. Max.

Unit

Peak Reverse Current

Peak Forward Voltage

I_RM

V_FM

Tj= 25°C, V_RM= V_RRM

Tj= 25°C, I_FM= 3.0A

Alumina Substrate mounted *1

Rth_(j-l)-

0.39

108

Thermal Junction to Ambient Rth_(j-a)

Resistance

°C /W

Junction to Lead

*1: Alumina Substrate mounted (Soldering Lands=2x2mm,Both Sides)

The curves of Average Forward Current vs. Temperature are the value that do not consider Reverse Power

Dissipation.

In actual use, consider the Reverse Power Dissipation to avoid thermal runaway of the diode.

12 3 4 5 6

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