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EC103M3AP PDF预览

EC103M3AP

更新时间: 2024-11-26 20:53:51
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极
页数 文件大小 规格书
10页 939K
描述
Silicon Controlled Rectifier, 0.8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

EC103M3AP 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.02配置:SINGLE
关态电压最小值的临界上升速率:20 V/us最大直流栅极触发电流:0.5 mA
最大直流栅极触发电压:0.8 V最大维持电流:8 mA
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3最大漏电流:0.1 mA
湿度敏感等级:2通态非重复峰值电流:20 A
元件数量:1端子数量:3
最高工作温度:110 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:0.8 A
断态重复峰值电压:600 V重复峰值反向电压:600 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
触发设备类型:SCRBase Number Matches:1

EC103M3AP 数据手册

 浏览型号EC103M3AP的Datasheet PDF文件第2页浏览型号EC103M3AP的Datasheet PDF文件第3页浏览型号EC103M3AP的Datasheet PDF文件第4页浏览型号EC103M3AP的Datasheet PDF文件第5页浏览型号EC103M3AP的Datasheet PDF文件第6页浏览型号EC103M3AP的Datasheet PDF文件第7页 
Teccor® brandThyristors  
0.8 Amp Sensitive SCRs  
EC103xx & SxSx Series  
Description  
Excellent unidirectional switches for phase control  
applications such as heating and motor speed controls.  
Sensitive gate SCRs are easily triggered with microAmps  
of current as furnished by sense coils, proximity switches,  
and microprocessors.  
Features & Benefits  
• RoHS compliant  
• Voltage capability up  
to 600 V  
• Glass – passivated  
junctions  
• Surge capability up to  
20 A  
Main Features  
Applications  
Typical applications are capacitive discharge systems  
for strobe lights and gas engine ignition. Also controls  
for power tools, home/brown goods and white goods  
appliances.  
Symbol  
Value  
0.8  
Unit  
A
IT(RMS)  
VDRM/VRRM  
400 to 600  
12 to 500  
V
IGT  
μA  
Schematic Symbol  
A
K
G
Absolute Maximum Ratings — Sensitive SCRs  
Symbol  
IT(RMS)  
IT(AV)  
Parameter  
Test Conditions  
Value  
Unit  
RMS on-state current  
TC = 75°C  
0.8  
A
Average on-state current  
TC = 75°C  
0.51  
16  
A
A
single half cycle; f = 50Hz;  
TJ (initial) = 25°C  
ITSM  
Peak non-repetitive surge current  
single half cycle; f = 60Hz;  
20  
TJ (initial) = 25°C  
I2t  
I2t Value for fusing  
Critical rate of rise of on-state current  
Peak gate current  
tp = 8.3 ms  
f = 60 Hz ;TJ = 110°C  
TJ = 110°C  
1.6  
50  
A2s  
A/μs  
A
di/dt  
IGM  
1
PG(AV)  
Tstg  
TJ  
Average gate power dissipation  
Storage temperature range  
0.1  
W
TJ = 110°C  
-40 to 150  
-40 to 110  
°C  
Operating junction temperature range  
°C  
EC103xx & SxSx Series  
©2011 Littelfuse, Inc  
163  
Revised: June 21, 2011 04:14 PM  
Specifications are subject to change without notice.  
Please refer to http://www.littelfuse.com for current information.  

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