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EBS12UC6APS PDF预览

EBS12UC6APS

更新时间: 2024-02-10 20:10:17
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器
页数 文件大小 规格书
14页 145K
描述
128MB SDRAM S.O.DIMM

EBS12UC6APS 数据手册

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DATA SHEET  
128MB SDRAM S.O.DIMM  
EBS12UC6APS (16M words × 64 bits, 1 bank)  
Description  
Features  
The EBS12UC6APS is 16M words × 64 bits, 1 bank  
Synchronous Dynamic RAM Small Outline Dual In-line  
Memory Module (S.O.DIMM), mounted 4 pieces of  
256M bits SDRAM (EDS2516APTA) sealed in TSOP  
package. This module provides high density and large  
quantities of memory in a small space without utilizing  
Fully compatible with 8 bytes S.O.DIMM: JEDEC  
standard outline  
144-pin socket type small outline dual in line memory  
module (S.O.DIMM)  
PCB height: 31.75mm (1.25inch )  
Lead pitch: 0.80mm  
the surface mounting technology.  
Decoupling  
3.3V power supply  
capacitors are mounted on power supply line for noise  
reduction.  
Clock frequency: 100MHz/133MHz (max.)  
LVTTL interface  
Data bus width: × 64 non-ECC  
Single pulsed /RAS  
4 Banks can operates simultaneously and  
independently  
Burst read/write operation and burst read/single write  
operation capability  
Programmable burst length (BL): 1, 2, 4, 8, Full page  
2 variations of burst sequence  
Sequential  
Interleave  
Programmable /CAS latency (CL): 2, 3  
Byte control by DQMB  
Refresh cycles: 8192 refresh cycles/64ms  
2 variations of refresh  
Auto refresh  
Self refresh  
Document No. E0224E20 (Ver. 2.0)  
Date Published November 2001 (K) Japan  
URL: http://www.elpida.com  
C
Elpida Memory, Inc. 2001  

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