Datasheet > EBS104

EBS104

更新时间： 2024-09-24 12:55:31

品牌	Logo	应用领域
SECOS		放大器
页数	文件大小	规格书
2页	200K
描述
Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers

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中文翻译

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数据手册

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EBS104 数据手册

EBS101 ~ EBS107

Voltage 50V ~ 1000V

1.0 Amp Silicon Bridge Rectifiers

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

EBS

ꢀ

Ideal for printed circuit board

Lead tin plated copper

Reliable low cost construction utilizing molded plastic

technique results in inexpensive product

MECHANICAL DATA

ꢀ

Polarity:Symbol molded on body

Mounting position :Any

ꢀ

PACKAGE INFORMATION

Package

MPQ

Leader Size

EBS

13 inch

Millimeter

Min. Max.

REF.

Min.

4.9

6.0

3.9

3.2

Max.

5.1

6.4

4.1

3.5

0.6

5.3

0.7

5.5

1.15

0.15

1.27

0.25

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, de-rate current by 20%.)

Part Number

Parameter

Symbol

Unit

EBS

101

EBS

102

EBS

103

EBS

104

EBS

105

EBS

106

EBS

107

1000

700

V_RRM

V_RMS

V_DC

I_F

100

200

140

200

400

280

400

600

420

600

800

560

800

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Output

Peak Forward Surge Current 8.3 ms Single

Half Sine-Wave Super Imposed on Rated Load

(JEDEC Method)

I_FSM

V_F

I_R

Maximum Forward Voltage @ 1A

1.1

T_J=25°C

Maximum DC Reverse Current

µA

at Rated DC Blocking Voltage

T_J=100°C

200

Typical Thermal Resistance ¹

θJC

°C / W

°C

Operating and Storage temperature range

T_J,T_STG

-55~150

Note:

1. Thermal resistance junction to case

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

11-May-2012 Rev. A

Page 1 of 2

中文翻译

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