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EBR25UC8ABFD PDF预览

EBR25UC8ABFD

更新时间: 2024-09-16 11:49:03
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器
页数 文件大小 规格书
12页 106K
描述
256MB Direct Rambus™ DRAM RIMM™ Module

EBR25UC8ABFD 数据手册

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DATA SHEET  
256MB Direct RambusDRAM RIMMModule  
EBR25UC8ABFD (128M words × 16 bits)  
Description  
Features  
The Direct Rambus RIMM module is a general-purpose  
high-performance memory module subsystem suitable  
for use in a broad range of applications including  
computer memory, personal computers, workstations,  
and other applications where high bandwidth and low  
latency are required.  
256MB Direct RDRAM storage and 256 banks total  
on module  
High speed 1066MHz/800MHz Direct RDRAM  
devices  
184 edge connector pads with 1mm pad spacing  
Module PCB size: 133.35mm × 34.925mm ×  
1.27mm  
The EBR25UC8ABFD consists of 8 pieces of 288M  
Direct Rambus DRAM (Direct RDRAM) devices.  
These are extremely high-speed CMOS DRAMs  
Gold plated edge connector pads contacts  
Serial Presence Detect (SPD) support  
Operates from a 2.5V supply  
organized as 16M words by 18 bits. The use of  
Rambus Signaling Level (RSL) technology permits  
1066MHz or 800MHz transfer rates while using  
conventional system and board design technologies.  
Low power and power down self refresh modes  
Separate Row and Column buses for higher  
efficiency  
RDRAMdevices use Chip Scale Package (CSP)  
FBGA package  
The architecture of the Direct RDRAM enables the  
highest sustained bandwidth for multiple, simultaneous,  
randomly addressed memory transactions.  
The separate control and data buses with independent  
row and column control yield over 95% bus efficiency.  
The Direct RDRAM device's 32 banks support up to  
four simultaneous transactions per device.  
Document No. E0317E21 (Ver. 2.1)  
Date Published March 2006 (K) Japan  
URL: http://www.elpida.com  
This product became EOL in April, 2004.  
Elpida Memory, Inc. 2002-2006  

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