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EBE51ED8AGWA PDF预览

EBE51ED8AGWA

更新时间: 2024-09-18 06:55:27
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器双倍数据速率
页数 文件大小 规格书
25页 198K
描述
512MB Unbuffered DDR2 SDRAM DIMM

EBE51ED8AGWA 数据手册

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PRELIMINARY DATA SHEET  
512MB Unbuffered DDR2 SDRAM DIMM  
EBE51ED8AGWA (64M words × 72 bits, 1 Rank)  
Specifications  
Features  
Density: 512MB  
Double-data-rate architecture; two data transfers per  
clock cycle  
Organization  
The high-speed data transfer is realized by the 4 bits  
prefetch pipelined architecture  
64M words × 72 bits, 1 rank  
Mounting 9 pieces of 512M bits DDR2 SDRAM  
sealed in FBGA  
Bi-directional differential data strobe (DQS and /DQS)  
is transmitted/received with data for capturing data at  
the receiver  
Package: 240-pin socket type dual in line memory  
module (DIMM)  
DQS is edge-aligned with data for READs; center-  
aligned with data for WRITEs  
PCB height: 30.0mm  
Lead pitch: 1.0mm  
Differential clock inputs (CK and /CK)  
Lead-free (RoHS compliant)  
Power supply: VDD = 1.8V ± 0.1V  
Data rate: 667Mbps/533Mbps (max.)  
DLL aligns DQ and DQS transitions with CK  
transitions  
Commands entered on each positive CK edge; data  
and data mask referenced to both edges of DQS  
Four internal banks for concurrent operation  
(components)  
Data mask (DM) for write data  
Interface: SSTL_18  
Posted /CAS by programmable additive latency for  
better command and data bus efficiency  
Burst lengths (BL): 4, 8  
/CAS Latency (CL): 3, 4, 5  
Off-Chip-Driver Impedance Adjustment and On-Die-  
Termination for better signal quality  
Precharge: auto precharge option for each burst  
/DQS can be disabled for single-ended Data Strobe  
access  
operation  
Refresh: auto-refresh, self-refresh  
Refresh cycles: 8192 cycles/64ms  
Average refresh period  
7.8µs at 0°C TC ≤ +85°C  
3.9µs at +85°C < TC ≤ +95°C  
Operating case temperature range  
TC = 0°C to +95°C  
Document No. E0922E10 (Ver. 1.0)  
Date Published June 2006 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2006  

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