5秒后页面跳转
EBE21UE8AFFA-6E-F PDF预览

EBE21UE8AFFA-6E-F

更新时间: 2024-11-07 06:55:27
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路动态存储器双倍数据速率时钟
页数 文件大小 规格书
30页 236K
描述
2GB Unbuffered DDR2 SDRAM DIMM

EBE21UE8AFFA-6E-F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIMM包装说明:DIMM, DIMM240,40
针数:240Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.84Is Samacsys:N
访问模式:DUAL BANK PAGE BURST最长访问时间:0.45 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):333 MHz
I/O 类型:COMMONJESD-30 代码:R-XDMA-N240
JESD-609代码:e4内存密度:34359738368 bit
内存集成电路类型:DDR DRAM MODULE内存宽度:64
功能数量:1端口数量:1
端子数量:240字数:536870912 words
字数代码:512000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:512MX64输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIMM
封装等效代码:DIMM240,40封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8 V认证状态:Not Qualified
刷新周期:8192自我刷新:YES
最大待机电流:0.16 A子类别:DRAMs
最大压摆率:2.88 mA最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:NO技术:CMOS
温度等级:OTHER端子形式:NO LEAD
端子节距:1 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

EBE21UE8AFFA-6E-F 数据手册

 浏览型号EBE21UE8AFFA-6E-F的Datasheet PDF文件第2页浏览型号EBE21UE8AFFA-6E-F的Datasheet PDF文件第3页浏览型号EBE21UE8AFFA-6E-F的Datasheet PDF文件第4页浏览型号EBE21UE8AFFA-6E-F的Datasheet PDF文件第5页浏览型号EBE21UE8AFFA-6E-F的Datasheet PDF文件第6页浏览型号EBE21UE8AFFA-6E-F的Datasheet PDF文件第7页 
DATA SHEET  
2GB Unbuffered DDR2 SDRAM DIMM  
EBE21UE8AFFA (256M words × 64 bits, 2 Ranks)  
Specifications  
Features  
Density: 2GB  
Organization  
256M words × 64 bits, 2 ranks  
Mounting 16 pieces of 1G bits DDR2 SDRAM sealed  
in FBGA  
Double-data-rate architecture; two data transfers per  
clock cycle  
The high-speed data transfer is realized by the 4 bits  
prefetch pipelined architecture  
Bi-directional differential data strobe (DQS and /DQS)  
is transmitted/received with data for capturing data at  
the receiver  
Package: 240-pin socket type dual in line memory  
module (DIMM)  
DQS is edge-aligned with data for READs; center-  
aligned with data for WRITEs  
PCB height: 30.0mm  
Lead pitch: 1.0mm  
Lead-free (RoHS compliant) and Halogen-free  
Power supply: VDD = 1.8V 0.1V  
Data rate: 800Mbps/667Mbps (max.)  
Differential clock inputs (CK and /CK)  
DLL aligns DQ and DQS transitions with CK  
transitions  
Commands entered on each positive CK edge; data  
and data mask referenced to both edges of DQS  
Eight internal banks for concurrent operation  
(components)  
Data mask (DM) for write data  
Posted /CAS by programmable additive latency for  
better command and data bus efficiency  
Interface: SSTL_18  
Burst lengths (BL): 4, 8  
/CAS Latency (CL): 3, 4, 5, 6  
Precharge: auto precharge option for each burst  
access  
Off-Chip-Driver Impedance Adjustment and On-Die-  
Termination for better signal quality  
/DQS can be disabled for single-ended Data Strobe  
operation  
Refresh: auto-refresh, self-refresh  
Refresh cycles: 8192 cycles/64ms  
Average refresh period  
7.8µs at 0°C TC ≤ +85°C  
3.9µs at +85°C < TC ≤ +95°C  
Operating case temperature range  
TC = 0°C to +95°C  
Document No. E1458E20 (Ver. 2.0)  
Date Published April 2009 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
©Elpida Memory, Inc. 2009  

与EBE21UE8AFFA-6E-F相关器件

型号 品牌 获取价格 描述 数据表
EBE21UE8AFFA-8G-F ELPIDA

获取价格

2GB Unbuffered DDR2 SDRAM DIMM
EBE21UE8AFSA ELPIDA

获取价格

2GB DDR2 SDRAM SO-DIMM
EBE21UE8AFSA-6E-F ELPIDA

获取价格

2GB DDR2 SDRAM SO-DIMM
EBE21UE8AFSA-8G-F ELPIDA

获取价格

2GB DDR2 SDRAM SO-DIMM
EBE24A ADAM-TECH

获取价格

EURO BLOCKS TS & EB SERIES
EBE24B ADAM-TECH

获取价格

EURO BLOCKS TS & EB SERIES
EBE24H ADAM-TECH

获取价格

EURO BLOCKS TS & EB SERIES
EBE24J ADAM-TECH

获取价格

EURO BLOCKS TS & EB SERIES
EBE24K ADAM-TECH

获取价格

EURO BLOCKS TS & EB SERIES
EBE25EC8AAFA ELPIDA

获取价格

256MB Unbuffered DDR2 SDRAM DIMM