Datasheet > EBE21RD4AGFA

EBE21RD4AGFA

更新时间： 2022-11-25 10:59:10

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器双倍数据速率
页数	文件大小	规格书
23页	183K
描述
2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks)

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EBE21RD4AGFA 数据手册

DATA SHEET

2GB Registered DDR2 SDRAM DIMM

EBE21RD4AGFA (256M words × 72 bits, 2 Ranks)

Description

Features

The EBE21RD4AGFA is a 256M words × 72 bits, 2

ranks DDR2 SDRAM Module, mounting 36 pieces of

512M bits DDR2 SDRAM sealed in FBGA (µBGA^)

package. Read and write operations are performed at

the cross points of the CK and the /CK. This high-

speed data transfer is realized by the 4bits prefetch-

pipelined architecture. Data strobe (DQS and /DQS)

both for read and write are available for high speed and

reliable data bus design. By setting extended mode

set enable or disable. This module provides high

density mounting without utilizing surface mount

• 240-pin socket type dual in line memory module

(DIMM)

PCB height: 30.0mm

Lead pitch: 1.0mm

Lead-free (RoHS compliant)

• Power supply: VDD = 1.8V ± 0.1V

• Data rate: 667Mbps/533Mbps/400Mbps (max.)

• SSTL_18 compatible I/O

• Double-data-rate architecture: two data transfers per

clock cycle

• Bi-directional, data strobe (DQS and /DQS) is

transmitted /received with data, to be used in

capturing data at the receiver

technology.

Decoupling capacitors are mounted

beside each FBGA (µBGA) on the module board.

• DQS is edge aligned with data for READs; center

aligned with data for WRITEs

Note: Do not push the cover or drop the modules in

order to avoid mechanical defects, which may

result in electrical defects.

• Differential clock inputs (CK and /CK)

• DLL aligns DQ and DQS transitions with CK

transitions

• Commands entered on each positive CK edge; data

referenced to both edges of DQS

• Four internal banks for concurrent operation

(components)

• Burst length: 4, 8

• /CAS latency (CL): 3, 4, 5

• Auto precharge option for each burst access

• Auto refresh and self refresh modes

• Average refresh period

7.8µs at 0°C ≤ TC ≤ +85°C

3.9µs at +85°C < TC ≤ +95°C

• Posted CAS by programmable additive latency for

better command and data bus efficiency

• Off-Chip-Driver Impedance Adjustment and On-Die-

Termination for better signal quality

• /DQS can be disabled for single-ended Data Strobe

operation

• 1 piece of PLL clock driver, 4 piece of register driver

and 1 piece of serial EEPROM (2k bits EEPROM) for

Presence Detect (PD)

Document No. E0794E20 (Ver. 2.0)

Date Published October 2005 (K) Japan

Printed in Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2005

12 3 4 5 6 7...23

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