FPM2750QFN
LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE
Datasheet v2.5
PACKAGE:
FEATURES:
•
•
•
•
•
•
•
Balanced low noise amplifier module
Excellent Noise figure: 0.4dB at 1850MHz
Low drive current: 40mA typical (3.0V)
Combined IP3: 36dBm (100mA)
Combined P1dB: 23dBm (100mA)
Small footprint: 4mm x 4mm x 0.9mm QFN
RoHS compliant: (Directive 2002/95/EC)
GENERAL DESCRIPTION:
TYPICAL APPLICATIONS:
The FPM2750QFN is a packaged pair of
•
Wireless infrastructure: Tower mounted
Amplifiers and front end LNAs for
EGSM/PCS/WCDMA/UMTS base stations
High intercept-point LNAs
pseudomorphic
High
Electron
Mobility
Transistors (pHEMT) specifically optimised for
balanced configuration systems. The Filtronic
0.25µm process ensures class-leading noise
•
performance.
The use of a small footprint
plastic package allows for a cost effective total
system implementation.
ELECTRICAL SPECIFICATIONS (as measured on each device unless otherwise stated):
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Noise Figure
NF
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
0.4
0.6
dB
Output IP3
IP3
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
32
36
dBm
dB
in balanced mode
33
SSG in balanced mode
P1dB in balanced mode
Small Signal Gain
SSG
P1dB
SSG
P1dB
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
18.5
20
17.5
21.5
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
21
dBm
dB
23.5
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
19.0
19.5
Power at 1dB Gain Compression
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
17.5
17.5
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
IDSS
IMAX
GM
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
185
230
375
200
5
280
mA
mA
mS
μA
V
Gate-Source Leakage Current
Pinch-Off Voltage
IGSO
|VP|
VDS = 1.3 V; IDS = 0.75 mA
0.7
1.0
1.3
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance
|VBDGS|
|VBDGD|
ΘJC
IGS = 0.75 mA
IGD = 0.75 mA
16
16
V
V
1W dissipation, case temperature 22°C
124
°C/W
Note: TAMBIENT = 22°; RF specification measured at f= 1850MHz using CW signal (except as noted).
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com